Microwave dielectric property of Si/C/N nano whisker

The Si/C/N nano whisker with certain composition was prepared by chemical vapor deposition (CVD). The phase of the whisker was determined as β-SiC by XRD. The TG analysis indicates that the whisker can resist oxidation up to 700°C. The dependence of the dielectric constant and the loss tangent on the action frequency was investigated. Based on the dielectric constant, mono and double layer absorber materials were designed, and the absorption property of the designed materials was estimated. The mechanism of microwave depletion by Si/C/N nano whisker was discussed, which is due to the doping of nitrogen atoms in SiC lattice.