Microstructure evolution and mechanical behavior of copper through‑silicon via structure under thermal cyclic loading

The through‑silicon via (TSV) technique is widely applied in the latest highly integrated circuits packaging. However, one of the prevalent failure modes is caused by thermal cyclic loading from power fluctuations of the chip. Different thermal expansion coefficients of Cu and Si could cause a mismatch of thermal stresses under temperature cycling, which will lead to thermal fatigue failure of structure. In the current study, thermal cycling experiments are performed on Cu-TSV samples to investigate the effect of temperature cycling on microstructure evolution and mechanical behavior. The electron backscatter diffraction analysis is conducted to investigate the grain size, local texture and microstructure evolution of Cu. Based on the crystal plasticity theory, a constitutive model considering temperature and grain size effect is developed, and the parameters are calibrated. Combining crystal plasticity theory and finite element analysis, the effects of grain orientation and different grain sizes on the stress distribution and plastic work evolution of TSV structure under thermal cyclic loading are investigated.