TY - JOUR
T1 - Microstructure and dielectric properties of (Ca0.2Sr0.2Ba0.2Mg0.2Bi0.1Na0.1)(Ti1-xZrx)O3 high-entropy ceramics
AU - Chen, Yilin
AU - Gao, Bingyan
AU - Jia, Chenglin
AU - Xu, Xiaoyu
AU - Cheng, Ziyang
AU - Cai, Jiayu
AU - Fan, Mengyuan
AU - Xu, Jie
AU - Li, Song
AU - Gao, Feng
N1 - Publisher Copyright:
© 2026
PY - 2026/10/15
Y1 - 2026/10/15
N2 - Achieving high dielectric constant with stable dielectric response over wide temperature and frequency ranges remains a major challenge for advanced dielectric ceramics due to the mutual constraint among properties. In this work, high‐entropy perovskite ceramics (Ca0.2Sr0.2Ba0.2Mg0.2Bi0.1Na0.1) (Ti1−xZrx)O3 (HEC6‐ZT) were designed by combining high-entropy with Zr4+ doping. Structural analysis confirms that all compositions form a single-phase perovskite structure. Increasing Zr4+ content induced lattice distortion, grain coarsening, and enhanced relaxor behavior, resulting in a non-monotonic evolution of dielectric properties. This evolution is due to the competition between enhanced compositional disorder and reduced intrinsic polarization. Consequently, HEC6-ZT ceramics with x = 0.1 doping showed the optimized dielectric properties, exhibiting high dielectric constant (981 at 1 kHz) and low dielectric loss (0.067), with excellent X7R specification and frequency stability (F(1M) = 0.15 from 1 kHz to 1 MHz). These results demonstrate the high-entropy and doping strategies provide an effective approach for balancing high dielectric constant and response stability, offering promising candidates for stable dielectric components in advanced electronic devices.
AB - Achieving high dielectric constant with stable dielectric response over wide temperature and frequency ranges remains a major challenge for advanced dielectric ceramics due to the mutual constraint among properties. In this work, high‐entropy perovskite ceramics (Ca0.2Sr0.2Ba0.2Mg0.2Bi0.1Na0.1) (Ti1−xZrx)O3 (HEC6‐ZT) were designed by combining high-entropy with Zr4+ doping. Structural analysis confirms that all compositions form a single-phase perovskite structure. Increasing Zr4+ content induced lattice distortion, grain coarsening, and enhanced relaxor behavior, resulting in a non-monotonic evolution of dielectric properties. This evolution is due to the competition between enhanced compositional disorder and reduced intrinsic polarization. Consequently, HEC6-ZT ceramics with x = 0.1 doping showed the optimized dielectric properties, exhibiting high dielectric constant (981 at 1 kHz) and low dielectric loss (0.067), with excellent X7R specification and frequency stability (F(1M) = 0.15 from 1 kHz to 1 MHz). These results demonstrate the high-entropy and doping strategies provide an effective approach for balancing high dielectric constant and response stability, offering promising candidates for stable dielectric components in advanced electronic devices.
KW - B-site doping
KW - Dielectric properties
KW - High-entropy
KW - Perovskite structure
KW - Relaxor ferroelectrics
UR - https://www.scopus.com/pages/publications/105043729174
U2 - 10.1016/j.physb.2026.419015
DO - 10.1016/j.physb.2026.419015
M3 - 文章
AN - SCOPUS:105043729174
SN - 0921-4526
VL - 740
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
M1 - 419015
ER -