摘要
The vapor transport properties in ZnSe-N-H-Cl CVT systems are interpreted based on the one-dimensional diffusion-limited model. The growth rate J is calculated to be 3.5-3.7×10-9 mol cm-2 s-1 at the temperature difference ΔT of 5 K between the source and the growth ends in the systems of ZnSe-NH4Cl, ZnSe-NH4Cl+Se and ZnSe-ZnCl2·2NH4Cl (AZC-II)+Se. The values related to the critical stability parameters of surface, Jcrit and ΔTcrit, are about 2.6×10-9 mol cm-2 s-1 and 3.5 K, respectively. J is not dependent on the amount of NH4Cl among the concentration range from 0.5 to 5.0 mg mL-1. The deviation from stoichiometry of the source material hardly affects on J when AZC-II and Se were added. The experimental investigations of transport rate are carried out using the seeded and un-seeded ampoules with various tip angles. The experimental growth rate Jexp and its critical values well agree with the calculated results. A critical temperature difference up to 5-7 K is obtained in the vertical manner growth.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 933-938 |
| 页数 | 6 |
| 期刊 | Journal of Crystal Growth |
| 卷 | 312 |
| 期 | 7 |
| DOI | |
| 出版状态 | 已出版 - 15 3月 2010 |
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