Low-threshold electrically pumped random lasers

Hai Zhu; Chong Xin Shan; Ji Ying Zhang; Zhen Zhong Zhang; Bing Hul Li; Dong Xu Zhao; Bin Yao; De Zhen Shen; Xi Wu Fan; Zi Kang Tang; Xlanghui Hou; Kwang Leong Choy

doi:10.1002/adma.200903623

Low-threshold electrically pumped random lasers

Hai Zhu
, Chong Xin Shan
, Ji Ying Zhang
, Zhen Zhong Zhang
, Bing Hul Li
, Dong Xu Zhao
, Bin Yao
, De Zhen Shen
, Xi Wu Fan
, Zi Kang Tang
, Xlanghui Hou
, Kwang Leong Choy

科研成果: 期刊稿件 › 文章 › 同行评审

141 引用（Scopus）

摘要

Electrically pumped random lasers are realized in ZnO nanocrystallite films in a simple metal-oxide-semiconductor structure. By introducing an i-ZnO layer, a threshold current of 6.5 mA is obtained. The reported results provide a simple route to electrically pumped random lasing (see figure) with relatively low threshold, a significant step towards the future applications of this kind of laser. (Fig. Represented)

源语言	英语
页（从-至）	1877-1881
页数	5
期刊	Advanced Materials
卷	22
期	16
DOI	https://doi.org/10.1002/adma.200903623
出版状态	已出版 - 22 4月 2010
已对外发布	是

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10.1002/adma.200903623

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abstract = "Electrically pumped random lasers are realized in ZnO nanocrystallite films in a simple metal-oxide-semiconductor structure. By introducing an i-ZnO layer, a threshold current of 6.5 mA is obtained. The reported results provide a simple route to electrically pumped random lasing (see figure) with relatively low threshold, a significant step towards the future applications of this kind of laser. (Fig. Represented)",

author = "Hai Zhu and Shan, \{Chong Xin\} and Zhang, \{Ji Ying\} and Zhang, \{Zhen Zhong\} and Li, \{Bing Hul\} and Zhao, \{Dong Xu\} and Bin Yao and Shen, \{De Zhen\} and Fan, \{Xi Wu\} and Tang, \{Zi Kang\} and Xlanghui Hou and Choy, \{Kwang Leong\}",

year = "2010",

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doi = "10.1002/adma.200903623",

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T1 - Low-threshold electrically pumped random lasers

AU - Zhu, Hai

AU - Shan, Chong Xin

AU - Zhang, Ji Ying

AU - Zhang, Zhen Zhong

AU - Li, Bing Hul

AU - Zhao, Dong Xu

AU - Yao, Bin

AU - Shen, De Zhen

AU - Fan, Xi Wu

AU - Tang, Zi Kang

AU - Hou, Xlanghui

AU - Choy, Kwang Leong

PY - 2010/4/22

Y1 - 2010/4/22

N2 - Electrically pumped random lasers are realized in ZnO nanocrystallite films in a simple metal-oxide-semiconductor structure. By introducing an i-ZnO layer, a threshold current of 6.5 mA is obtained. The reported results provide a simple route to electrically pumped random lasing (see figure) with relatively low threshold, a significant step towards the future applications of this kind of laser. (Fig. Represented)

AB - Electrically pumped random lasers are realized in ZnO nanocrystallite films in a simple metal-oxide-semiconductor structure. By introducing an i-ZnO layer, a threshold current of 6.5 mA is obtained. The reported results provide a simple route to electrically pumped random lasing (see figure) with relatively low threshold, a significant step towards the future applications of this kind of laser. (Fig. Represented)

UR - https://www.scopus.com/pages/publications/77951583425

U2 - 10.1002/adma.200903623

DO - 10.1002/adma.200903623

M3 - 文章

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AN - SCOPUS:77951583425

SN - 0935-9648

VL - 22

SP - 1877

EP - 1881

JO - Advanced Materials

JF - Advanced Materials

IS - 16

ER -

Low-threshold electrically pumped random lasers

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