Investigation on Cd_0.9Zn_0.1Te crystal doped with Al

Al-doped and In-doped Cd_0.9Zn_0.1Te crystals were grown by the modified vertical Bridgman (MVB) in the same growth conditions and characterized by various methods. The resistivity of Al-doped crystal, which shows weak p-type or weak n-type, is high in the range of 6×10⁹-2×10¹⁰ Ω·cm, while In-doped crystal shows n-type with resistivity in the order of 10⁵ Ω·cm. The infrared transmission spectrum shows that the IR transmittance of Al-doped crystal is flat and high from 4000-500 cm^-1, while the IR transmittance of In-doped crystal is lower and decreases with the decrease of wavenumbers until to zero below 1250 cm^-1. The detector prepared from Al-doped crystal obtains the energy resolution of 14% FWHM at ²⁴¹Am 59.54 keV, which shows that Al-doped crystal basically satisfies the application requirements as detector materials.