TY - JOUR
T1 - Influence of Te Atmosphere Annealing Time on Cd1-xMgxTe Single Crystal Properties and Detector Performance
AU - Yu, Pengfei
AU - Guo, Jiasai
AU - Ji, Yibo
AU - Wang, Baishuo
AU - Sun, Guodong
AU - Wen, Jiuran
AU - Jie, Wanqi
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2026
Y1 - 2026
N2 - Cd1-xMgxTe single crystals were annealed by Te atmosphere, with a focus on the effect of annealing time on the crystal properties and detector performance. The density of Te inclusions remained stable within the range of 2.15×104-2.22×104 cm2. With the increase of annealing time, the content of each element in the crystal was closer to the stoichiometric composition Cd0.95Mg0.05Te. No additional surface oxidation was observed. The resistivity first increased and then decreased, reaching a maximum of 6.49×1010 Ω·cm, which was an increase of three orders of magnitude. After 240 h of annealing, the resistivity decreased to 1.65×1010 Ω·cm. The optimal annealing conditions were 120 h at 773 K. The detector performance was significantly improved. The electron mobility was enhanced by 7 times, increasing from 52.27 to 366.05 cm2/(V·s). The energy resolution was improved by 1.9 times, reaching 18.4%. And the carrier mobility-lifetime product was increased by 1.7 times, rising from 8.57×105 to 1.42×10-4 cm2/V.
AB - Cd1-xMgxTe single crystals were annealed by Te atmosphere, with a focus on the effect of annealing time on the crystal properties and detector performance. The density of Te inclusions remained stable within the range of 2.15×104-2.22×104 cm2. With the increase of annealing time, the content of each element in the crystal was closer to the stoichiometric composition Cd0.95Mg0.05Te. No additional surface oxidation was observed. The resistivity first increased and then decreased, reaching a maximum of 6.49×1010 Ω·cm, which was an increase of three orders of magnitude. After 240 h of annealing, the resistivity decreased to 1.65×1010 Ω·cm. The optimal annealing conditions were 120 h at 773 K. The detector performance was significantly improved. The electron mobility was enhanced by 7 times, increasing from 52.27 to 366.05 cm2/(V·s). The energy resolution was improved by 1.9 times, reaching 18.4%. And the carrier mobility-lifetime product was increased by 1.7 times, rising from 8.57×105 to 1.42×10-4 cm2/V.
KW - Annealing
KW - CdMgTe single crystal
KW - resistivity
KW - room temperature radiation detector
KW - Te atmosphere
UR - https://www.scopus.com/pages/publications/105042945388
U2 - 10.1109/TNS.2026.3706705
DO - 10.1109/TNS.2026.3706705
M3 - 文章
AN - SCOPUS:105042945388
SN - 0018-9499
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
ER -