Improving the microwave dielectric properties of Ti3SiC2powders by Al doping

Zhimin Li; Fa Luo; Chuangchuang He; Zi Yang; Peixian Li; Yue Hao

doi:10.1016/j.jallcom.2014.08.199

Improving the microwave dielectric properties of Ti₃SiC₂powders by Al doping

Zhimin Li
, Fa Luo
, Chuangchuang He
, Zi Yang
, Peixian Li
, Yue Hao

材料学院

School of Advanced Materials and Nanotechnology, Xidian University

科研成果: 期刊稿件 › 文章 › 同行评审

28 引用（Scopus）

摘要

Al-doped Ti₃SiC₂powders were synthesized by solid state reaction under a vacuum atmosphere. Results showed that Al doping effectively improved the purity of the as-prepared Ti₃SiC₂powders which had a narrow particle size distribution. The complex permittivities and reflection loss of Ti₃SiC₂samples were determined in the frequency range of 8.2-12.4 GHz. It was found that 20% Al-doped sample showed the greatest values in the real part ε′ and imaginary part ε″ of complex permittivity and the better reflection loss with an absorbing thickness of 2.1 mm. The mechanism of dielectric loss by Al doping was discussed.

源语言	英语
页（从-至）	508-511
页数	4
期刊	Journal of Alloys and Compounds
卷	618
DOI	https://doi.org/10.1016/j.jallcom.2014.08.199
出版状态	已出版 - 5 1月 2015

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10.1016/j.jallcom.2014.08.199

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title = "Improving the microwave dielectric properties of Ti3SiC2powders by Al doping",

abstract = "Al-doped Ti3SiC2powders were synthesized by solid state reaction under a vacuum atmosphere. Results showed that Al doping effectively improved the purity of the as-prepared Ti3SiC2powders which had a narrow particle size distribution. The complex permittivities and reflection loss of Ti3SiC2samples were determined in the frequency range of 8.2-12.4 GHz. It was found that 20\% Al-doped sample showed the greatest values in the real part ε′ and imaginary part ε″ of complex permittivity and the better reflection loss with an absorbing thickness of 2.1 mm. The mechanism of dielectric loss by Al doping was discussed.",

keywords = "Al doping, Dielectric properties, Microwave absorbing materials, TiSiC",

author = "Zhimin Li and Fa Luo and Chuangchuang He and Zi Yang and Peixian Li and Yue Hao",

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T1 - Improving the microwave dielectric properties of Ti3SiC2powders by Al doping

AU - Li, Zhimin

AU - Luo, Fa

AU - He, Chuangchuang

AU - Yang, Zi

AU - Li, Peixian

AU - Hao, Yue

PY - 2015/1/5

Y1 - 2015/1/5

N2 - Al-doped Ti3SiC2powders were synthesized by solid state reaction under a vacuum atmosphere. Results showed that Al doping effectively improved the purity of the as-prepared Ti3SiC2powders which had a narrow particle size distribution. The complex permittivities and reflection loss of Ti3SiC2samples were determined in the frequency range of 8.2-12.4 GHz. It was found that 20% Al-doped sample showed the greatest values in the real part ε′ and imaginary part ε″ of complex permittivity and the better reflection loss with an absorbing thickness of 2.1 mm. The mechanism of dielectric loss by Al doping was discussed.

AB - Al-doped Ti3SiC2powders were synthesized by solid state reaction under a vacuum atmosphere. Results showed that Al doping effectively improved the purity of the as-prepared Ti3SiC2powders which had a narrow particle size distribution. The complex permittivities and reflection loss of Ti3SiC2samples were determined in the frequency range of 8.2-12.4 GHz. It was found that 20% Al-doped sample showed the greatest values in the real part ε′ and imaginary part ε″ of complex permittivity and the better reflection loss with an absorbing thickness of 2.1 mm. The mechanism of dielectric loss by Al doping was discussed.

KW - Al doping

KW - Dielectric properties

KW - Microwave absorbing materials

KW - TiSiC

UR - https://www.scopus.com/pages/publications/84949125817

U2 - 10.1016/j.jallcom.2014.08.199

DO - 10.1016/j.jallcom.2014.08.199

M3 - 文章

AN - SCOPUS:84949125817

SN - 0925-8388

VL - 618

SP - 508

EP - 511

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Improving the microwave dielectric properties of Ti3SiC2powders by Al doping

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Improving the microwave dielectric properties of Ti₃SiC₂powders by Al doping