Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by van der Waals Integration

Jian Guo; Laiyuan Wang; Yuan Liu; Zipeng Zhao; Enbo Zhu; Zhaoyang Lin; Peiqi Wang; Chuancheng Jia; Shengxue Yang; Sung Joon Lee; Wei Huang; Yu Huang; Xiangfeng Duan

doi:10.1016/j.matt.2020.01.011

Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by van der Waals Integration

Jian Guo
, Laiyuan Wang
, Yuan Liu
, Zipeng Zhao
, Enbo Zhu
, Zhaoyang Lin
, Peiqi Wang
, Chuancheng Jia
, Shengxue Yang
, Sung Joon Lee
, Wei Huang
, Yu Huang
, Xiangfeng Duan

University of California at Los Angeles
Nanjing University of Posts and Telecommunications

科研成果: 期刊稿件 › 文章 › 同行评审

70 引用（Scopus）

摘要

To adapt a thin and fragile active layer for continued memristor scaling requires alternative damage-free metal-integration strategies. By adopting a van der Waals (vdW) metal-integration approach, this work constructs memristors with vdW contacts between metal and thin native oxide on 2D material SnSe. The “low-energy” vdW-integration process preserves the delicate SnO_x and enables reliable memristors with low operation voltage, excellent endurance, and retention. This strategy defines a unique vdW-integration solution for fragile memristive materials.

源语言	英语
页（从-至）	965-976
页数	12
期刊	Matter
卷	2
期	4
DOI	https://doi.org/10.1016/j.matt.2020.01.011
出版状态	已出版 - 1 4月 2020
已对外发布	是

访问文件

10.1016/j.matt.2020.01.011

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{dee6afed620f441598719f3b10ec4e91,

title = "Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by van der Waals Integration",

abstract = "To adapt a thin and fragile active layer for continued memristor scaling requires alternative damage-free metal-integration strategies. By adopting a van der Waals (vdW) metal-integration approach, this work constructs memristors with vdW contacts between metal and thin native oxide on 2D material SnSe. The {\textquotedblleft}low-energy{\textquotedblright} vdW-integration process preserves the delicate SnOx and enables reliable memristors with low operation voltage, excellent endurance, and retention. This strategy defines a unique vdW-integration solution for fragile memristive materials.",

keywords = "2D materials, MAP4: Demonstrate, artificial synapse, heterosynaptic plasticity, memristor, memtransistor, neuromorphic electronics, resistive random-access memory (RRAM), van der Waals (vdW) contact",

author = "Jian Guo and Laiyuan Wang and Yuan Liu and Zipeng Zhao and Enbo Zhu and Zhaoyang Lin and Peiqi Wang and Chuancheng Jia and Shengxue Yang and Lee, \{Sung Joon\} and Wei Huang and Yu Huang and Xiangfeng Duan",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Inc.",

year = "2020",

month = apr,

day = "1",

doi = "10.1016/j.matt.2020.01.011",

language = "英语",

volume = "2",

pages = "965--976",

journal = "Matter",

issn = "2590-2393",

publisher = "Cell Press",

number = "4",

}

TY - JOUR

T1 - Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by van der Waals Integration

AU - Guo, Jian

AU - Wang, Laiyuan

AU - Liu, Yuan

AU - Zhao, Zipeng

AU - Zhu, Enbo

AU - Lin, Zhaoyang

AU - Wang, Peiqi

AU - Jia, Chuancheng

AU - Yang, Shengxue

AU - Lee, Sung Joon

AU - Huang, Wei

AU - Huang, Yu

AU - Duan, Xiangfeng

PY - 2020/4/1

Y1 - 2020/4/1

N2 - To adapt a thin and fragile active layer for continued memristor scaling requires alternative damage-free metal-integration strategies. By adopting a van der Waals (vdW) metal-integration approach, this work constructs memristors with vdW contacts between metal and thin native oxide on 2D material SnSe. The “low-energy” vdW-integration process preserves the delicate SnOx and enables reliable memristors with low operation voltage, excellent endurance, and retention. This strategy defines a unique vdW-integration solution for fragile memristive materials.

AB - To adapt a thin and fragile active layer for continued memristor scaling requires alternative damage-free metal-integration strategies. By adopting a van der Waals (vdW) metal-integration approach, this work constructs memristors with vdW contacts between metal and thin native oxide on 2D material SnSe. The “low-energy” vdW-integration process preserves the delicate SnOx and enables reliable memristors with low operation voltage, excellent endurance, and retention. This strategy defines a unique vdW-integration solution for fragile memristive materials.

KW - 2D materials

KW - MAP4: Demonstrate

KW - artificial synapse

KW - heterosynaptic plasticity

KW - memristor

KW - memtransistor

KW - neuromorphic electronics

KW - resistive random-access memory (RRAM)

KW - van der Waals (vdW) contact

UR - https://www.scopus.com/pages/publications/85082512901

U2 - 10.1016/j.matt.2020.01.011

DO - 10.1016/j.matt.2020.01.011

M3 - 文章

AN - SCOPUS:85082512901

SN - 2590-2393

VL - 2

SP - 965

EP - 976

JO - Matter

JF - Matter

IS - 4

ER -

Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by van der Waals Integration

摘要

访问文件

其它文件与链接

学术指纹

引用此