High quality vanadium dioxide thin film prepared on non-crystal substrate

The authors found that VO₂ thin films prepared in a certain way can also exhibit best switching properties. The best resistivity switching of a VO₂ thin film obtainable on a crystal substrate is of 4-5 orders of magnitude when cycled through the metal-insulator phase transition at about 68°C, whereas the usually obtainable resistivity switching of a VO₂ thin film prepared on a non-crystal substrate is only of 2-3 orders of magnitude. They can raise it to 4-5 orders of magnitude through a way called the inorganic sol-gel method (vanadium alkoxide used in ordinary sol-gel method is organic and unstable).