Growth process and mechanism of SiC whiskers by induction of carbon fiber

Silicon carbide whiskers were prepared by the induction of carbon fiber and using carbonized rice hulls as raw materials. The composition and morphology of the whiskers were analyzed by X-ray diffraction and electron microscopy. The experimental results show that the SiC whiskers are formed attached to carbon fibers, and are kept separate from the residue spontaneously. The diameters of the whiskers are 0.5-2 μm, and the lengths are 100-500 μm. Whiskers with smooth surfaces consist of straight β-SiC crystals. No inclusions are found in the whiskers, and the achievable rate of SiC whiskers is 100%. There are no catalyst bulbs on the tips of the whiskers. The mechanism of whisker growth is vapor synthesis according to the discussion based on the thermodynamic points.