摘要
The effects of chemical (nitrogen or boron) doping on electronic properties of graphene nanoribbons with armchair edges (AGNR) had been investigated by first-principles based on the Density Functional Theory. The calculations indicate that the most favorable doping sites are different for various doping atoms. Accordingly, the doped systems are transformed into n- or p-type semiconductors. However, for AGNR with diverse widths, the chemical doping has distinct effects on the electronic structures, such as energy levels, energy gap, orbital distributions, etc.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 48-52 |
| 页数 | 5 |
| 期刊 | Rengong Jingti Xuebao/Journal of Synthetic Crystals |
| 卷 | 40 |
| 期 | 1 |
| 出版状态 | 已出版 - 2月 2011 |
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