摘要
Application of multifunctional integrated devices represents a main trend in the future. However, it is still a great challenge to realize ferroelectric metals in a single system. Here, we report the coexistence of metallicity and ferroelectricity-like polarization at GdAlO3/SrTiO3 heterointerfaces. The results show that the asymmetric bistable polarization in the GdAlO3 film is attributed to the spontaneous polarization of oxygen vacancies. Furthermore, the transport property of GdAlO3/SrTiO3 heterointerfaces can be significantly manipulated by switching the polarization state. It is observed that the switchable conductance significantly improves under the influence of a polarization state at 6 V. Its change in the resistance is about 17.2% under 10 V, which accelerates the commercial application of oxide devices.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 611-616 |
| 页数 | 6 |
| 期刊 | Journal of Physical Chemistry C |
| 卷 | 126 |
| 期 | 1 |
| DOI | |
| 出版状态 | 已出版 - 13 1月 2022 |
指纹
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