TY - JOUR
T1 - Extra hole threshold in HfO2 ferroelectric phase stabilization
AU - Jing, Xixiang
AU - Yue, Yuhao
AU - Lv, Shuning
AU - Jia, Kang
AU - Song, Kepeng
AU - Sawyerr, Fatoye
AU - Hu, Qi
AU - Zhang, Zekun
AU - Shi, Shu
AU - Wen, Shifeng
AU - Liu, Li Min
AU - Chen, Jingsheng
AU - Fan, Xiaoli
AU - Wen, Zheng
AU - Cao, Tengfei
N1 - Publisher Copyright:
© The Author(s) 2025.
PY - 2025/12
Y1 - 2025/12
N2 - Understanding ferroelectric phase stability in hafnium-based oxides is crucial for high-quality thin-film fabrication and device applications. Multiple strategies stabilize the phase, with evidence highlighting extra holes’ key role. However, research on extra holes’ impact on ferroelectric phase stabilization remains inadequate. This study combines first-principles calculations with experimental data, identifying a critical extra-hole concentration threshold (0.3 h/f.u.) for HfO2 ferroelectric phase stabilization. We designed two coordinated experiments to verify the extra-hole threshold in HfO2. Using SrRuO3 (SRO) as the bottom electrode, we studied three HfO2 systems (Sm, Eu, and La doped). All systems showed optimal ferroelectric performance at 7.5% doping. Our results also showed that HfO2 films on Sm-doped (La0.67Sr0.33MnO3) LSMO (5.5% doping) achieve optimal polarization, comparable to SRO (7.5%). These mutually corroborative experimental and theoretical results indicate that the extra-hole threshold optimizes HfO2 ferroelectric thin film growth and facilitates its electronic device applications.
AB - Understanding ferroelectric phase stability in hafnium-based oxides is crucial for high-quality thin-film fabrication and device applications. Multiple strategies stabilize the phase, with evidence highlighting extra holes’ key role. However, research on extra holes’ impact on ferroelectric phase stabilization remains inadequate. This study combines first-principles calculations with experimental data, identifying a critical extra-hole concentration threshold (0.3 h/f.u.) for HfO2 ferroelectric phase stabilization. We designed two coordinated experiments to verify the extra-hole threshold in HfO2. Using SrRuO3 (SRO) as the bottom electrode, we studied three HfO2 systems (Sm, Eu, and La doped). All systems showed optimal ferroelectric performance at 7.5% doping. Our results also showed that HfO2 films on Sm-doped (La0.67Sr0.33MnO3) LSMO (5.5% doping) achieve optimal polarization, comparable to SRO (7.5%). These mutually corroborative experimental and theoretical results indicate that the extra-hole threshold optimizes HfO2 ferroelectric thin film growth and facilitates its electronic device applications.
UR - https://www.scopus.com/pages/publications/105025820375
U2 - 10.1038/s42005-025-02438-x
DO - 10.1038/s42005-025-02438-x
M3 - 文章
AN - SCOPUS:105025820375
SN - 2399-3650
VL - 8
JO - Communications Physics
JF - Communications Physics
IS - 1
M1 - 501
ER -