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Evolution of dislocation loops in chromium under single hydrogen and helium ion irradiation

  • Qining Zheng
  • , Mingju Chen
  • , Biao Chen
  • , Shuqin Wen
  • , Ce Zheng
  • , Shuiqing Liu
  • , Guanghai Bai
  • , Jinshan Li
  • Northwestern Polytechnical University Xian
  • Hebei University of Technology
  • Xi'an University of Science and Technology

科研成果: 期刊稿件文章同行评审

3 引用 (Scopus)

摘要

Dislocation loops, which are typical irradiation defects, can be influenced by hydrogen and helium produced by transmutation reactions. The evolution of dislocation loops in chromium (Cr) coatings under room temperature irradiation with single H+ and He+ is observed using transmission electron microscopy (TEM). At equivalent damage levels, the density of dislocation loops is higher under irradiation with He+ compared to that with H+. This indicates that helium promotes the nucleation of dislocation loops more effectively than hydrogen does, whereas hydrogen promotes the growth of dislocation loops more, resulting in larger loop sizes. Irradiation with both hydrogen and helium ions resulted in the formation of more a0 〈100〉 dislocation loops in Cr, comprising roughly half of the total observed loops.

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