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Enhancing Capacitance of Nickel Cobalt Chalcogenide via Interface Structural Design

  • Fei Lu
  • , Min Zhou
  • , Kun Su
  • , Tao Ye
  • , Yijun Yang
  • , Tran Dai Lam
  • , Yoshio Bando
  • , Xi Wang
  • Beijing Jiaotong University
  • Yangzhou University
  • Baotou Medical College
  • Graduate University of Science and Technology
  • Tianjin University
  • National Institute for Materials Science Tsukuba

科研成果: 期刊稿件文章同行评审

26 引用 (Scopus)

摘要

Spinel NiCo 2 X 4 (X = O or S), comprising two geometrical cobalt ions, Co 2+ in the tetrahedral site (Co 2+ Td ) and Co 3+ in the octahedral site (Co 3+ Oh ), has been widely evaluated as a promising pseudocapacitor electrode material. Previous literature mainly demonstrated that much higher specific capacitance of NiCo 2 S 4 than that of NiCo 2 O 4 was ascribed to the higher electronic conductivity. However, we argue that only a small amount of capacitance can be induced by the electronic conductivity, while the significance of electrochemical active species in these system has long been ignored. Here, we propose that geometrical-site-dependent pseudocapacitive activity will generate enhanced specific capacitance through the interface structural design. It reveals that specific capacitance of NiCo 2 S 4 (1862 F g -1 at 4 A g -1 ) is 50% higher than that of NiCo 2 O 4 (1230 F g -1 at 4 A g -1 ), which is derived from the designed increase of Co 2+ Td ions (cobalt ions in the tetrahedral site) in NiCo 2 S 4 . These results have significant implications for the design and optimization of the electrochemical properties of transition-metal-based pseudocapacitors.

源语言英语
页(从-至)2082-2092
页数11
期刊ACS Applied Materials and Interfaces
11
2
DOI
出版状态已出版 - 16 1月 2019
已对外发布

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