Enhanced thermoelectric performance in polycrystalline N-type Pr-doped SnSe by hot forging

Shan Li; Fanghao Zhang; Chen Chen; Xiaofang Li; Feng Cao; Jiehe Sui; Xingjun Liu; Zhifeng Ren; Qian Zhang

doi:10.1016/j.actamat.2020.03.009

Enhanced thermoelectric performance in polycrystalline N-type Pr-doped SnSe by hot forging

Shan Li
, Fanghao Zhang
, Chen Chen
, Xiaofang Li
, Feng Cao
, Jiehe Sui
, Xingjun Liu
, Zhifeng Ren
, Qian Zhang

Harbin Institute of Technology
University of Houston
School of Science, Harbin Institute of Technology Shenzhen
Harbin Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

40 引用（Scopus）

摘要

SnSe has attracted significant attention for use in thermoelectric devices due to its reported ultrahigh figure-of-merit ZT in both p- and n-type single crystals, which inspired us to explore the thermoelectric properties of SnSe polycrystals for potential large-scale applications. Here, n-type Sn_1- _xPr_xSe polycrystals are prepared by ball milling and hot pressing. A maximum ZT value of ~0.7 at 773 K is achieved in Sn_0.97Pr_0.03Se due to the enhanced electron concentration and electrical conductivity resulting from Pr doping at the Sn site. Through hot forging for a higher degree of orientation, a lowered thermal conductivity is obtained along the hot-pressing direction, contributing to an enhanced ZT value of ~0.9 at 773 K in this direction. This study paves a new way for optimization of n-type SnSe by cation-site lanthanide doping.

源语言	英语
页（从-至）	1-7
页数	7
期刊	Acta Materialia
卷	190
DOI	https://doi.org/10.1016/j.actamat.2020.03.009
出版状态	已出版 - 15 5月 2020
已对外发布	是

访问文件

10.1016/j.actamat.2020.03.009

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{ef582aab279d4dc999ee9d026e1b7f6b,

title = "Enhanced thermoelectric performance in polycrystalline N-type Pr-doped SnSe by hot forging",

abstract = "SnSe has attracted significant attention for use in thermoelectric devices due to its reported ultrahigh figure-of-merit ZT in both p- and n-type single crystals, which inspired us to explore the thermoelectric properties of SnSe polycrystals for potential large-scale applications. Here, n-type Sn1- xPrxSe polycrystals are prepared by ball milling and hot pressing. A maximum ZT value of \textasciitilde{}0.7 at 773 K is achieved in Sn0.97Pr0.03Se due to the enhanced electron concentration and electrical conductivity resulting from Pr doping at the Sn site. Through hot forging for a higher degree of orientation, a lowered thermal conductivity is obtained along the hot-pressing direction, contributing to an enhanced ZT value of \textasciitilde{}0.9 at 773 K in this direction. This study paves a new way for optimization of n-type SnSe by cation-site lanthanide doping.",

keywords = "Hot forging, N-type, SnSe, Thermoelectric",

author = "Shan Li and Fanghao Zhang and Chen Chen and Xiaofang Li and Feng Cao and Jiehe Sui and Xingjun Liu and Zhifeng Ren and Qian Zhang",

note = "Publisher Copyright: {\textcopyright} 2020 Acta Materialia Inc.",

year = "2020",

month = may,

day = "15",

doi = "10.1016/j.actamat.2020.03.009",

language = "英语",

volume = "190",

pages = "1--7",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "Acta Materialia Inc",

}

TY - JOUR

T1 - Enhanced thermoelectric performance in polycrystalline N-type Pr-doped SnSe by hot forging

AU - Li, Shan

AU - Zhang, Fanghao

AU - Chen, Chen

AU - Li, Xiaofang

AU - Cao, Feng

AU - Sui, Jiehe

AU - Liu, Xingjun

AU - Ren, Zhifeng

AU - Zhang, Qian

PY - 2020/5/15

Y1 - 2020/5/15

N2 - SnSe has attracted significant attention for use in thermoelectric devices due to its reported ultrahigh figure-of-merit ZT in both p- and n-type single crystals, which inspired us to explore the thermoelectric properties of SnSe polycrystals for potential large-scale applications. Here, n-type Sn1- xPrxSe polycrystals are prepared by ball milling and hot pressing. A maximum ZT value of ~0.7 at 773 K is achieved in Sn0.97Pr0.03Se due to the enhanced electron concentration and electrical conductivity resulting from Pr doping at the Sn site. Through hot forging for a higher degree of orientation, a lowered thermal conductivity is obtained along the hot-pressing direction, contributing to an enhanced ZT value of ~0.9 at 773 K in this direction. This study paves a new way for optimization of n-type SnSe by cation-site lanthanide doping.

AB - SnSe has attracted significant attention for use in thermoelectric devices due to its reported ultrahigh figure-of-merit ZT in both p- and n-type single crystals, which inspired us to explore the thermoelectric properties of SnSe polycrystals for potential large-scale applications. Here, n-type Sn1- xPrxSe polycrystals are prepared by ball milling and hot pressing. A maximum ZT value of ~0.7 at 773 K is achieved in Sn0.97Pr0.03Se due to the enhanced electron concentration and electrical conductivity resulting from Pr doping at the Sn site. Through hot forging for a higher degree of orientation, a lowered thermal conductivity is obtained along the hot-pressing direction, contributing to an enhanced ZT value of ~0.9 at 773 K in this direction. This study paves a new way for optimization of n-type SnSe by cation-site lanthanide doping.

KW - Hot forging

KW - N-type

KW - SnSe

KW - Thermoelectric

UR - https://www.scopus.com/pages/publications/85082852525

U2 - 10.1016/j.actamat.2020.03.009

DO - 10.1016/j.actamat.2020.03.009

M3 - 文章

AN - SCOPUS:85082852525

SN - 1359-6454

VL - 190

SP - 1

EP - 7

JO - Acta Materialia

JF - Acta Materialia

ER -

Enhanced thermoelectric performance in polycrystalline N-type Pr-doped SnSe by hot forging

摘要

访问文件

其它文件与链接

指纹

引用此