Enhanced Thermoelectric Performance in N-Type Mg3.2Sb1.5Bi0.5 by La or Ce Doping into Mg

Fan Zhang; Chen Chen; Shan Li; Li Yin; Bo Yu; Jiehe Sui; Feng Cao; Xingjun Liu; Zhifeng Ren; Qian Zhang

doi:10.1002/aelm.201901391

Enhanced Thermoelectric Performance in N-Type Mg_3.2Sb_1.5Bi_0.5 by La or Ce Doping into Mg

Fan Zhang
, Chen Chen
, Shan Li
, Li Yin
, Bo Yu
, Jiehe Sui
, Feng Cao
, Xingjun Liu
, Zhifeng Ren
, Qian Zhang

Harbin Institute of Technology
University of Houston
Ningbo Fengcheng Advanced Energy Materials Research Institute
Harbin Institute of Technology
School of Science, Harbin Institute of Technology Shenzhen

科研成果: 期刊稿件 › 文章 › 同行评审

38 引用（Scopus）

摘要

N-type Mg_3.2Sb_1.5Bi_0.5 materials are prepared by cation-site doping with lanthanides (La, Ce). Both La- and Ce-doped samples exhibit a higher doping limit and greater efficiency than those of chalcogen (Te, Se, S)-doped n-type Mg_3.2Sb_1.5Bi_0.5 samples. High electron carrier concentration ≈9 × 10¹⁹ cm⁻³ is obtained in Mg_3.18La_0.02Sb_1.5Bi_0.5 and Mg_3.185Ce_0.015Sb_1.5Bi_0.5, which is close to the theoretical doping-concentration limit and induces contributions from more electron bands. A higher electrical conductivity was thus obtained and is beneficial to the enhanced ZT values for lanthanide-doped Mg_3.2Sb_1.5Bi_0.5. The highest ZT value ≈1.6 is achieved in Mg_3.19La_0.01Sb_1.5Bi_0.5 at 693 K, along with a ZT ≈1.50 in Mg_3.19Ce_0.01Sb_1.5Bi_0.5 at 693 K, indicating that lanthanides provide a promising doping strategy for Mg_3.2Sb_1.5Bi_0.5-based materials.

源语言	英语
期刊论文编号	1901391
期刊	Advanced Electronic Materials
卷	6
期	3
DOI	https://doi.org/10.1002/aelm.201901391
出版状态	已出版 - 1 3月 2020
已对外发布	是

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@article{879fe20641af4aa89ba8c84104a2ed2a,

title = "Enhanced Thermoelectric Performance in N-Type Mg3.2Sb1.5Bi0.5 by La or Ce Doping into Mg",

abstract = "N-type Mg3.2Sb1.5Bi0.5 materials are prepared by cation-site doping with lanthanides (La, Ce). Both La- and Ce-doped samples exhibit a higher doping limit and greater efficiency than those of chalcogen (Te, Se, S)-doped n-type Mg3.2Sb1.5Bi0.5 samples. High electron carrier concentration ≈9 {\texttimes} 1019 cm−3 is obtained in Mg3.18La0.02Sb1.5Bi0.5 and Mg3.185Ce0.015Sb1.5Bi0.5, which is close to the theoretical doping-concentration limit and induces contributions from more electron bands. A higher electrical conductivity was thus obtained and is beneficial to the enhanced ZT values for lanthanide-doped Mg3.2Sb1.5Bi0.5. The highest ZT value ≈1.6 is achieved in Mg3.19La0.01Sb1.5Bi0.5 at 693 K, along with a ZT ≈1.50 in Mg3.19Ce0.01Sb1.5Bi0.5 at 693 K, indicating that lanthanides provide a promising doping strategy for Mg3.2Sb1.5Bi0.5-based materials.",

keywords = "Mg Sb, Seebeck coefficient, thermal conductivity, thermoelectrics",

author = "Fan Zhang and Chen Chen and Shan Li and Li Yin and Bo Yu and Jiehe Sui and Feng Cao and Xingjun Liu and Zhifeng Ren and Qian Zhang",

note = "Publisher Copyright: {\textcopyright} 2020 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2020",

month = mar,

day = "1",

doi = "10.1002/aelm.201901391",

language = "英语",

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journal = "Advanced Electronic Materials",

issn = "2199-160X",

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TY - JOUR

T1 - Enhanced Thermoelectric Performance in N-Type Mg3.2Sb1.5Bi0.5 by La or Ce Doping into Mg

AU - Zhang, Fan

AU - Chen, Chen

AU - Li, Shan

AU - Yin, Li

AU - Yu, Bo

AU - Sui, Jiehe

AU - Cao, Feng

AU - Liu, Xingjun

AU - Ren, Zhifeng

AU - Zhang, Qian

PY - 2020/3/1

Y1 - 2020/3/1

N2 - N-type Mg3.2Sb1.5Bi0.5 materials are prepared by cation-site doping with lanthanides (La, Ce). Both La- and Ce-doped samples exhibit a higher doping limit and greater efficiency than those of chalcogen (Te, Se, S)-doped n-type Mg3.2Sb1.5Bi0.5 samples. High electron carrier concentration ≈9 × 1019 cm−3 is obtained in Mg3.18La0.02Sb1.5Bi0.5 and Mg3.185Ce0.015Sb1.5Bi0.5, which is close to the theoretical doping-concentration limit and induces contributions from more electron bands. A higher electrical conductivity was thus obtained and is beneficial to the enhanced ZT values for lanthanide-doped Mg3.2Sb1.5Bi0.5. The highest ZT value ≈1.6 is achieved in Mg3.19La0.01Sb1.5Bi0.5 at 693 K, along with a ZT ≈1.50 in Mg3.19Ce0.01Sb1.5Bi0.5 at 693 K, indicating that lanthanides provide a promising doping strategy for Mg3.2Sb1.5Bi0.5-based materials.

AB - N-type Mg3.2Sb1.5Bi0.5 materials are prepared by cation-site doping with lanthanides (La, Ce). Both La- and Ce-doped samples exhibit a higher doping limit and greater efficiency than those of chalcogen (Te, Se, S)-doped n-type Mg3.2Sb1.5Bi0.5 samples. High electron carrier concentration ≈9 × 1019 cm−3 is obtained in Mg3.18La0.02Sb1.5Bi0.5 and Mg3.185Ce0.015Sb1.5Bi0.5, which is close to the theoretical doping-concentration limit and induces contributions from more electron bands. A higher electrical conductivity was thus obtained and is beneficial to the enhanced ZT values for lanthanide-doped Mg3.2Sb1.5Bi0.5. The highest ZT value ≈1.6 is achieved in Mg3.19La0.01Sb1.5Bi0.5 at 693 K, along with a ZT ≈1.50 in Mg3.19Ce0.01Sb1.5Bi0.5 at 693 K, indicating that lanthanides provide a promising doping strategy for Mg3.2Sb1.5Bi0.5-based materials.

KW - Mg Sb

KW - Seebeck coefficient

KW - thermal conductivity

KW - thermoelectrics

UR - https://www.scopus.com/pages/publications/85078819687

U2 - 10.1002/aelm.201901391

DO - 10.1002/aelm.201901391

M3 - 文章

AN - SCOPUS:85078819687

SN - 2199-160X

VL - 6

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 3

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ER -

Enhanced Thermoelectric Performance in N-Type Mg3.2Sb1.5Bi0.5 by La or Ce Doping into Mg

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Enhanced Thermoelectric Performance in N-Type Mg_3.2Sb_1.5Bi_0.5 by La or Ce Doping into Mg