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Electroluminescent device containg 1, 4-bis (4-N, N-methylamino styryl) naphthalene as emitting layer

  • Chun Bo Wang
  • , Wan Li Jiang
  • , Jian Lin
  • , Xiao Mei Wang
  • , Wei Zhou Zhang
  • , Wei Huang
  • Soochow University
  • Shandong University
  • Nanjing University of Posts and Telecommunications

科研成果: 期刊稿件文章同行评审

摘要

The electroluminescence devices (ITO/NPB/emitting layer/BCP/Mg:Ag) based on 1, 4-bis (4-N, N-methylamino styryl) naphthalene as emitting layer have been designed by the energy band matching principle. Current efficiency, power efficiency, brightness and stability of the devices have been enhanced when the thickness of hole countercheck layer (BCP) is increased to 60 nm in comparison with 30 nm. The three-layer electroluminescence devices exhibit the maximum brightness of 2100 cd/m2 and the largest power efficiency of 0.4lm/W respectively.

源语言英语
页(从-至)1408-1410
页数3
期刊Gongneng Cailiao/Journal of Functional Materials
38
9
出版状态已出版 - 9月 2007
已对外发布

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