Effects of post-growth annealing on the performance of CdZnTe: In radiation detectors with different thickness

Pengfei Yu; Wanqi Jie

doi:10.1016/j.nima.2013.11.053

Effects of post-growth annealing on the performance of CdZnTe: In radiation detectors with different thickness

Pengfei Yu
, Wanqi Jie

科研成果: 期刊稿件 › 文章 › 同行评审

10 引用（Scopus）

摘要

An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely after annealing. Both the resistivity and IR transmittance of annealed CZT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detector fabricated by annealed CZT:In slices with 2 mm thickness, the energy resolution and (μτ)_e value were enhanced about 63% and 115%, respectively. And for that fabricated by annealed CZT:In slices with 5 mm thickness, the energy resolution and (μτ)_e value were enhanced about 300% and 88%, respectively.

源语言	英语
页（从-至）	29-32
页数	4
期刊	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
卷	737
DOI	https://doi.org/10.1016/j.nima.2013.11.053
出版状态	已出版 - 11 2月 2014
已对外发布	是

访问文件

10.1016/j.nima.2013.11.053

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{e094ca951bd14e198bd974b5a0d3de14,

title = "Effects of post-growth annealing on the performance of CdZnTe: In radiation detectors with different thickness",

abstract = "An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely after annealing. Both the resistivity and IR transmittance of annealed CZT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detector fabricated by annealed CZT:In slices with 2 mm thickness, the energy resolution and (μτ)e value were enhanced about 63\% and 115\%, respectively. And for that fabricated by annealed CZT:In slices with 5 mm thickness, the energy resolution and (μτ)e value were enhanced about 300\% and 88\%, respectively.",

keywords = "CdZnTe:In, IR transmittance, Radiation detector, Resistivity, Te inclusions",

author = "Pengfei Yu and Wanqi Jie",

year = "2014",

month = feb,

day = "11",

doi = "10.1016/j.nima.2013.11.053",

language = "英语",

volume = "737",

pages = "29--32",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Effects of post-growth annealing on the performance of CdZnTe

T2 - In radiation detectors with different thickness

AU - Yu, Pengfei

AU - Jie, Wanqi

PY - 2014/2/11

Y1 - 2014/2/11

N2 - An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely after annealing. Both the resistivity and IR transmittance of annealed CZT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detector fabricated by annealed CZT:In slices with 2 mm thickness, the energy resolution and (μτ)e value were enhanced about 63% and 115%, respectively. And for that fabricated by annealed CZT:In slices with 5 mm thickness, the energy resolution and (μτ)e value were enhanced about 300% and 88%, respectively.

AB - An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely after annealing. Both the resistivity and IR transmittance of annealed CZT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detector fabricated by annealed CZT:In slices with 2 mm thickness, the energy resolution and (μτ)e value were enhanced about 63% and 115%, respectively. And for that fabricated by annealed CZT:In slices with 5 mm thickness, the energy resolution and (μτ)e value were enhanced about 300% and 88%, respectively.

KW - CdZnTe:In

KW - IR transmittance

KW - Radiation detector

KW - Resistivity

KW - Te inclusions

UR - https://www.scopus.com/pages/publications/84889678652

U2 - 10.1016/j.nima.2013.11.053

DO - 10.1016/j.nima.2013.11.053

M3 - 文章

AN - SCOPUS:84889678652

SN - 0168-9002

VL - 737

SP - 29

EP - 32

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Effects of post-growth annealing on the performance of CdZnTe: In radiation detectors with different thickness

摘要

访问文件

其它文件与链接

指纹

引用此