Effects of low-temperature annealing on Ohmic contact of Au/p-CdZnTe

Xiaoqin Wang; Wanqi Jie; Huanyong Li; Qiang Li; Zewen Wang

doi:10.1016/j.nima.2005.12.251

Effects of low-temperature annealing on Ohmic contact of Au/p-CdZnTe

Xiaoqin Wang
, Wanqi Jie
, Huanyong Li
, Qiang Li
, Zewen Wang

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

26 引用（Scopus）

摘要

Effect of annealing time at 333 K in air on the ohmic property of Au/p-CdZnTe contact was studied. Through I-V measurement, it was found that Au/p-CdZnTe had excellent ohmic property after 2 h annealing. SEM and XPS analyses showed that Au atoms diffused into CdZnTe during annealing. Diffused Au did not form any compound with any element in CdZnTe, but replaced Cd sites or occupied Cd vacancy as acceptors. Thus, the heavy p-type doping layer was formed and M-p⁺-p ohmic contact was obtained. At the same time, about 27.01% of Te in un-deposited CdZnTe surface layer was oxided into TeO₂ during 2 h annealing.

源语言	英语
页（从-至）	409-412
页数	4
期刊	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
卷	560
期	2
DOI	https://doi.org/10.1016/j.nima.2005.12.251
出版状态	已出版 - 10 5月 2006

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10.1016/j.nima.2005.12.251

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title = "Effects of low-temperature annealing on Ohmic contact of Au/p-CdZnTe",

abstract = "Effect of annealing time at 333 K in air on the ohmic property of Au/p-CdZnTe contact was studied. Through I-V measurement, it was found that Au/p-CdZnTe had excellent ohmic property after 2 h annealing. SEM and XPS analyses showed that Au atoms diffused into CdZnTe during annealing. Diffused Au did not form any compound with any element in CdZnTe, but replaced Cd sites or occupied Cd vacancy as acceptors. Thus, the heavy p-type doping layer was formed and M-p+-p ohmic contact was obtained. At the same time, about 27.01\% of Te in un-deposited CdZnTe surface layer was oxided into TeO2 during 2 h annealing.",

keywords = "Annealing, Doping, Ohmic contact, Tunnel effect",

author = "Xiaoqin Wang and Wanqi Jie and Huanyong Li and Qiang Li and Zewen Wang",

year = "2006",

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doi = "10.1016/j.nima.2005.12.251",

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TY - JOUR

T1 - Effects of low-temperature annealing on Ohmic contact of Au/p-CdZnTe

AU - Wang, Xiaoqin

AU - Jie, Wanqi

AU - Li, Huanyong

AU - Li, Qiang

AU - Wang, Zewen

PY - 2006/5/10

Y1 - 2006/5/10

N2 - Effect of annealing time at 333 K in air on the ohmic property of Au/p-CdZnTe contact was studied. Through I-V measurement, it was found that Au/p-CdZnTe had excellent ohmic property after 2 h annealing. SEM and XPS analyses showed that Au atoms diffused into CdZnTe during annealing. Diffused Au did not form any compound with any element in CdZnTe, but replaced Cd sites or occupied Cd vacancy as acceptors. Thus, the heavy p-type doping layer was formed and M-p+-p ohmic contact was obtained. At the same time, about 27.01% of Te in un-deposited CdZnTe surface layer was oxided into TeO2 during 2 h annealing.

AB - Effect of annealing time at 333 K in air on the ohmic property of Au/p-CdZnTe contact was studied. Through I-V measurement, it was found that Au/p-CdZnTe had excellent ohmic property after 2 h annealing. SEM and XPS analyses showed that Au atoms diffused into CdZnTe during annealing. Diffused Au did not form any compound with any element in CdZnTe, but replaced Cd sites or occupied Cd vacancy as acceptors. Thus, the heavy p-type doping layer was formed and M-p+-p ohmic contact was obtained. At the same time, about 27.01% of Te in un-deposited CdZnTe surface layer was oxided into TeO2 during 2 h annealing.

KW - Annealing

KW - Doping

KW - Ohmic contact

KW - Tunnel effect

UR - https://www.scopus.com/pages/publications/33646080131

U2 - 10.1016/j.nima.2005.12.251

DO - 10.1016/j.nima.2005.12.251

M3 - 文章

AN - SCOPUS:33646080131

SN - 0168-9002

VL - 560

SP - 409

EP - 412

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 2

ER -

Effects of low-temperature annealing on Ohmic contact of Au/p-CdZnTe

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