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Effects of Bi and Sb doping on the thermoelectric performance of n-type quaternary Mg2.18Ge0.1Si0.3Sn0.6 materials

  • B. I. Rabiu
  • , B. Huang
  • , W. A. Shah
  • , X. Luo
  • , Y. Q. Yang
  • Northwestern Polytechnical University Xian

科研成果: 期刊稿件文章同行评审

摘要

Mg2.18(Si0.3Ge0.1Sn0.6)1-yXy (X ​= ​Bi, Sb; y ​= ​0, 0.02, 0.06) quaternary solid solutions were synthesized via solid state reaction after ball milling followed by hot-pressing. The influences of Bi and Sb doping on its thermoelectric (TE) properties, such as thermal conductivity, Seebeck coefficient, and electrical conductivity were discussed in the temperature range of 300–800 ​K. Our results show that Bi and Sb are effective in n-type doping. The results illustrate that the Seebeck coefficient decreases, whereas electrical conductivity increases with increasing temperature for undoped compositions. However, the electrical conductivity decreases in a metal-like behavior for the doped sample. Additionally, the samples doped with Bi0.02 and Sb0.02 show enhanced TE properties as compared to those doped with Bi0.06 and Sb0.06, respectively. A maximum ZT of 1.28 is achieved in the sample doped with Sb0.02.

源语言英语
文章编号123574
期刊Journal of Solid State Chemistry
316
DOI
出版状态已出版 - 12月 2022

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