TY - GEN
T1 - Effect of vacancy defects on electronic and magnetic properties of zigzag silicon nanoribbons
AU - Yang, Yanni
AU - Wang, Junjie
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - we investigate the electronic and magnetic characteristics of the zigzag silicon nanoribbons (ZSiNRs) having a monovacancy or a divacancy by the first-principles calculations based on density-functional theory. No matter a monovacancy or a divacancy, a direct semiconductor ZSiNRs turn to a metallic character, but when the vacancy is at different position, there is a different magnetic properties. The ZSiNRs become metallic no matter a monovacancy or divacancy after relaxation, when the vacancy is at the center, they have antiferromagnetic property, while they have ferromagnetic property in non-center.
AB - we investigate the electronic and magnetic characteristics of the zigzag silicon nanoribbons (ZSiNRs) having a monovacancy or a divacancy by the first-principles calculations based on density-functional theory. No matter a monovacancy or a divacancy, a direct semiconductor ZSiNRs turn to a metallic character, but when the vacancy is at different position, there is a different magnetic properties. The ZSiNRs become metallic no matter a monovacancy or divacancy after relaxation, when the vacancy is at the center, they have antiferromagnetic property, while they have ferromagnetic property in non-center.
KW - Electronic and magnetic properties
KW - Frist-principles
KW - Silicon nanoribbons
KW - Vacancy
UR - https://www.scopus.com/pages/publications/85126991393
U2 - 10.1109/IAECST54258.2021.9695730
DO - 10.1109/IAECST54258.2021.9695730
M3 - 会议稿件
AN - SCOPUS:85126991393
T3 - 2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021
SP - 998
EP - 1002
BT - 2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021
Y2 - 10 December 2021 through 12 December 2021
ER -