TY - GEN
T1 - Effect of temperature field on deposition of boron carbide coating form BCl3-CH4-H2 system
AU - Liu, Yongsheng
AU - Zhang, Litong
AU - Cheng, Laifei
AU - Yang, Wenbin
AU - Zhang, Weihua
AU - Xu, Yongdong
PY - 2010
Y1 - 2010
N2 - Boron carbide was prepared by low pressure chemical vapor deposition from BCl3-CH4-H2 system. Firstly, the temperature distributions of field A and B were tested. The results showed that the temperature distribution of field B is more uniform than that of field A. The effects of temperature field on deposit characteristic and deposition mechanism were investigated. The results showed that the temperature field had an important effect on the morphologies, phases, microstructure and compositions of deposits. Under the temperature field A, the morphologies were crystalline-like, the boron concentration was 87.11 at.%, and the phase of deposit was B13 C2 as confirmed by XRD and TEM. Under the temperature field B, the morphologies were cauliflower-like, the boron concentration was 75.34at.%, the phase of deposit was amorphous boron carbide as confirmed by XRD and TEM. The above differences were attributed to the different reaction mechanism during the deposition process under field A and field B. The early reactions between BCl3 and CH4 before deposition process were critical to the formation of amorphous boron carbide.
AB - Boron carbide was prepared by low pressure chemical vapor deposition from BCl3-CH4-H2 system. Firstly, the temperature distributions of field A and B were tested. The results showed that the temperature distribution of field B is more uniform than that of field A. The effects of temperature field on deposit characteristic and deposition mechanism were investigated. The results showed that the temperature field had an important effect on the morphologies, phases, microstructure and compositions of deposits. Under the temperature field A, the morphologies were crystalline-like, the boron concentration was 87.11 at.%, and the phase of deposit was B13 C2 as confirmed by XRD and TEM. Under the temperature field B, the morphologies were cauliflower-like, the boron concentration was 75.34at.%, the phase of deposit was amorphous boron carbide as confirmed by XRD and TEM. The above differences were attributed to the different reaction mechanism during the deposition process under field A and field B. The early reactions between BCl3 and CH4 before deposition process were critical to the formation of amorphous boron carbide.
KW - Boron carbide
KW - CVD
KW - Deposition mechanism
KW - Effect
KW - Temperature field
UR - https://www.scopus.com/pages/publications/77952400116
U2 - 10.1002/9780470640845.ch54
DO - 10.1002/9780470640845.ch54
M3 - 会议稿件
AN - SCOPUS:77952400116
SN - 9780470408421
T3 - Ceramic Transactions
SP - 379
EP - 386
BT - Ceramic Materials and Components for Energy and Environmental Applications - 9th Int. Symp. on Ceramic Materials for Energy and Environmental Applications and the 4th Laser Ceramics Symp.
PB - American Ceramic Society
T2 - Ceramic Materials and Components for Energy and Environmental Applications - 9th International Symposium on Ceramic Materials for Energy and Environmental Applications and the 4th Laser Ceramics Symposium
Y2 - 10 November 2008 through 14 November 2008
ER -