Effect of Te atmosphere annealing on the properties of CdZnTe single crystals

Pengfei Yu; Wanqi Jie; Tao Wang

doi:10.1016/j.nima.2011.02.092

Effect of Te atmosphere annealing on the properties of CdZnTe single crystals

Pengfei Yu
, Wanqi Jie
, Tao Wang

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

24 引用（Scopus）

摘要

Low-resistivity CdZnTe:In (CZT:In) single crystals were annealed under Te atmosphere according to the behaviors of deep-donor Te antisite. The results indicated that the star-like Cd inclusions were completely eliminated after 120 h annealing. Meanwhile, the resistivity is greatly enhanced. The resistivity of the slice annealed after 240 h was achieved as high as 1.8×10¹¹ Ω cm, five orders of magnitude higher than that of as-grown slice. It suggested that the deep-donor level Te antisites were successfully introduced to pin the Fermi level at the mid band-gap position. The IR transmittances of the slices were also improved, which increased as the annealing time increased. PL measurement revealed that the (D⁰,X) peak representing high quality of CZT crystal appeared. It can be concluded that the quality of CZT crystals is obviously improved after annealing under Te atmosphere.

源语言	英语
页（从-至）	53-56
页数	4
期刊	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
卷	643
期	1
DOI	https://doi.org/10.1016/j.nima.2011.02.092
出版状态	已出版 - 1 7月 2011

访问文件

10.1016/j.nima.2011.02.092

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{283cf17895404c31a3f8f2377816de20,

title = "Effect of Te atmosphere annealing on the properties of CdZnTe single crystals",

abstract = "Low-resistivity CdZnTe:In (CZT:In) single crystals were annealed under Te atmosphere according to the behaviors of deep-donor Te antisite. The results indicated that the star-like Cd inclusions were completely eliminated after 120 h annealing. Meanwhile, the resistivity is greatly enhanced. The resistivity of the slice annealed after 240 h was achieved as high as 1.8×1011 Ω cm, five orders of magnitude higher than that of as-grown slice. It suggested that the deep-donor level Te antisites were successfully introduced to pin the Fermi level at the mid band-gap position. The IR transmittances of the slices were also improved, which increased as the annealing time increased. PL measurement revealed that the (D0,X) peak representing high quality of CZT crystal appeared. It can be concluded that the quality of CZT crystals is obviously improved after annealing under Te atmosphere.",

keywords = "Cd inclusions, CdZnTe:In crystals, IR transmittance, PL spectrum, Resistivity",

author = "Pengfei Yu and Wanqi Jie and Tao Wang",

year = "2011",

month = jul,

day = "1",

doi = "10.1016/j.nima.2011.02.092",

language = "英语",

volume = "643",

pages = "53--56",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Effect of Te atmosphere annealing on the properties of CdZnTe single crystals

AU - Yu, Pengfei

AU - Jie, Wanqi

AU - Wang, Tao

PY - 2011/7/1

Y1 - 2011/7/1

N2 - Low-resistivity CdZnTe:In (CZT:In) single crystals were annealed under Te atmosphere according to the behaviors of deep-donor Te antisite. The results indicated that the star-like Cd inclusions were completely eliminated after 120 h annealing. Meanwhile, the resistivity is greatly enhanced. The resistivity of the slice annealed after 240 h was achieved as high as 1.8×1011 Ω cm, five orders of magnitude higher than that of as-grown slice. It suggested that the deep-donor level Te antisites were successfully introduced to pin the Fermi level at the mid band-gap position. The IR transmittances of the slices were also improved, which increased as the annealing time increased. PL measurement revealed that the (D0,X) peak representing high quality of CZT crystal appeared. It can be concluded that the quality of CZT crystals is obviously improved after annealing under Te atmosphere.

AB - Low-resistivity CdZnTe:In (CZT:In) single crystals were annealed under Te atmosphere according to the behaviors of deep-donor Te antisite. The results indicated that the star-like Cd inclusions were completely eliminated after 120 h annealing. Meanwhile, the resistivity is greatly enhanced. The resistivity of the slice annealed after 240 h was achieved as high as 1.8×1011 Ω cm, five orders of magnitude higher than that of as-grown slice. It suggested that the deep-donor level Te antisites were successfully introduced to pin the Fermi level at the mid band-gap position. The IR transmittances of the slices were also improved, which increased as the annealing time increased. PL measurement revealed that the (D0,X) peak representing high quality of CZT crystal appeared. It can be concluded that the quality of CZT crystals is obviously improved after annealing under Te atmosphere.

KW - Cd inclusions

KW - CdZnTe:In crystals

KW - IR transmittance

KW - PL spectrum

KW - Resistivity

UR - https://www.scopus.com/pages/publications/79957447832

U2 - 10.1016/j.nima.2011.02.092

DO - 10.1016/j.nima.2011.02.092

M3 - 文章

AN - SCOPUS:79957447832

SN - 0168-9002

VL - 643

SP - 53

EP - 56

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

Effect of Te atmosphere annealing on the properties of CdZnTe single crystals

摘要

访问文件

其它文件与链接

学术指纹

引用此