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Effect of P and Ge doping on microstructure of Sn-0.3Ag-0.7Cu/Cu solder joints

  • Xingchen Yan
  • , Yichen Zhang
  • , Chunyan Wang
  • , Kexin Xu
  • , Junjie Wang
  • , Xicheng Wei

科研成果: 书/报告/会议事项章节会议稿件同行评审

1 引用 (Scopus)

摘要

The microstructure and interfacial IMC layer of Cu/SACPG/Cu and Cu/SAC0307/Cu solder joints were comparatively investigated after thermal aging at 150°C for 0h, 24h, 168h and 500h, respectively. Results show that the morphology of IMC at the interface of Cu/SAC0307/Cu solder joint was consistent with that at the interface of Cu/SACPG/Cu joint, which indicates that the addition of P and Ge had little effect on the IMC formation. The tiny particles attached to the Cu6Sn5 were Ag3Sn phase and Ge from the study of three dimensional morphology of IMC. The addition of trace P and Ge in the alloy reduced the thickness of IMC layer and decreased the growth rate of IMC layer with aging time increasing, and had lower impact on the growth rate of IMC layer of Cu3Sn.

源语言英语
主期刊名2016 17th International Conference on Electronic Packaging Technology, ICEPT 2016
编辑Keyun Bi, Sheng Liu, Shengjun Zhou
出版商Institute of Electrical and Electronics Engineers Inc.
1185-1188
页数4
ISBN(电子版)9781509013968
DOI
出版状态已出版 - 4 10月 2016
已对外发布
活动17th International Conference on Electronic Packaging Technology, ICEPT 2016 - Wuhan, 中国
期限: 16 8月 201619 8月 2016

出版系列

姓名2016 17th International Conference on Electronic Packaging Technology, ICEPT 2016

会议

会议17th International Conference on Electronic Packaging Technology, ICEPT 2016
国家/地区中国
Wuhan
时期16/08/1619/08/16

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