TY - JOUR
T1 - Effect of oxidation behavior on visible–infrared property of TiN films
AU - Lu, Linlin
AU - Xu, Jie
AU - Liu, Yi
AU - Dong, Jie
AU - Su, Xiaolei
AU - Luo, Fa
N1 - Publisher Copyright:
© 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2022/2
Y1 - 2022/2
N2 - TiN films were oxidized at different temperatures (300, 400, 500, and 600 °C) for different times (1, 10, 50, and100 h), and the effect of oxidation behavior on optical performance and infrared emissivity of TiN films was investigated. The results showed that TiN films were oxidized to the solid solution of TiON with the same crystal structure as TiN at 400 °C for 1 h. The films exhibited low reflectance and transmittance and the infrared emissivity changed little. With the extension of oxidation time, TiON gradually transformed into Ti2O3 and TiO2 and the infrared emissivity of the films went up. As the oxidation temperature rose above 500 °C, TiN films were oxidized quickly and the infrared emissivity increased to 0.8.
AB - TiN films were oxidized at different temperatures (300, 400, 500, and 600 °C) for different times (1, 10, 50, and100 h), and the effect of oxidation behavior on optical performance and infrared emissivity of TiN films was investigated. The results showed that TiN films were oxidized to the solid solution of TiON with the same crystal structure as TiN at 400 °C for 1 h. The films exhibited low reflectance and transmittance and the infrared emissivity changed little. With the extension of oxidation time, TiON gradually transformed into Ti2O3 and TiO2 and the infrared emissivity of the films went up. As the oxidation temperature rose above 500 °C, TiN films were oxidized quickly and the infrared emissivity increased to 0.8.
UR - https://www.scopus.com/pages/publications/85122313953
U2 - 10.1007/s10854-021-07527-5
DO - 10.1007/s10854-021-07527-5
M3 - 文章
AN - SCOPUS:85122313953
SN - 0957-4522
VL - 33
SP - 3267
EP - 3274
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 6
ER -