Effect of deposition temperature on deposition kinetics and mechanism of silicon boron nitride coating deposited from SiCl₄-BCl₃-NH₃-H₂-Ar mixture using low pressure chemical vapor deposition

The effect of deposition temperature on deposition kinetics and mechanism of silicon boron nitride (SiBN) coating was investigated from SiCl₄-BCl₃-NH₃-H₂-Ar mixture using low pressure chemical vapor deposition (LPCVD). Results showed that the deposition rates increased from 700°C to 1030°C, and then decreased above 1030°C. The relative content of silicon increased with increasing deposition temperature. The SiBN coating was of amorphous phase and its surface morphology showed cauliflower-like. The bonding states of SiBN coating were the B-N and Si-N bonding at all deposition temperatures, which demonstrated that the SiBN coating is composed of very small Si-N and B-N particles and the main deposition mechanisms refer to two parallel reaction systems of BCl₃+NH₃ and SiCl₄+NH₃. The deposition reactions were mainly controlled by BCl₃+NH₃ under 900°C, and by SiCl₄+NH₃ over 900°C.