TY - JOUR
T1 - Dual nitrogen-doped MoS2/graphene heterostructure for ultrafast potassium-ion storage
T2 - A combined computational and experimental study
AU - Sarwar, Muhammad Khaqan
AU - Li, Tiehu
AU - Li, Hao
AU - Jalil, Abdul
AU - Noman, Muhammad
N1 - Publisher Copyright:
© 2025 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies.
PY - 2026/1/30
Y1 - 2026/1/30
N2 - The development of advanced anode materials for potassium-ion batteries (PIBs) significantly constrained by volume expansion and interfacial resistance during potassium ion (K+) intercalation. Comprehensive density functional theory (DFT) testing of nitrogen (N), Phosphorus (P), and Aluminum (Al) doped MoS2/graphene systems conducted, we identified nitrogen-doped MoS2/graphene (N-MoS2@NG) as the optimal candidate, eliminating MoS2bandgap (1.67 eV → 0 eV) exhibiting superior electronic properties as evidenced by electronic localization function (ELF), density of states (DOS), and band structure calculations. Implementing these theoretical predictions, we fabricated N-MoS2@NG conductive heterostructure via self-propagating combustion synthesis (SPCS). Electrochemical testing demonstrates exceptional performance, including a high reversible capacity (310 mAh g−1), outstanding rate capability (288 mAh g−1at 1 A g−1after 100 cycles), superior cycling stability (81.6 % retention after 1000 cycles with columbic efficiency 99.8 %), achieving a 61.3 % reduction in interfacial resistance (12 Ω vs. 31 Ω for undoped MoS2@G), supported by a predominantly pseudocapacitive storage mechanism (81 % contribution at 0.6 mV s−1) that enables ultrafast potassium-ion storage. This work successfully bridges computational design with experimental realization, presenting N-MoS2@NG as a high-performance anode solution that addresses the fundamental challenges in PIB technology through synergistic materials engineering.
AB - The development of advanced anode materials for potassium-ion batteries (PIBs) significantly constrained by volume expansion and interfacial resistance during potassium ion (K+) intercalation. Comprehensive density functional theory (DFT) testing of nitrogen (N), Phosphorus (P), and Aluminum (Al) doped MoS2/graphene systems conducted, we identified nitrogen-doped MoS2/graphene (N-MoS2@NG) as the optimal candidate, eliminating MoS2bandgap (1.67 eV → 0 eV) exhibiting superior electronic properties as evidenced by electronic localization function (ELF), density of states (DOS), and band structure calculations. Implementing these theoretical predictions, we fabricated N-MoS2@NG conductive heterostructure via self-propagating combustion synthesis (SPCS). Electrochemical testing demonstrates exceptional performance, including a high reversible capacity (310 mAh g−1), outstanding rate capability (288 mAh g−1at 1 A g−1after 100 cycles), superior cycling stability (81.6 % retention after 1000 cycles with columbic efficiency 99.8 %), achieving a 61.3 % reduction in interfacial resistance (12 Ω vs. 31 Ω for undoped MoS2@G), supported by a predominantly pseudocapacitive storage mechanism (81 % contribution at 0.6 mV s−1) that enables ultrafast potassium-ion storage. This work successfully bridges computational design with experimental realization, presenting N-MoS2@NG as a high-performance anode solution that addresses the fundamental challenges in PIB technology through synergistic materials engineering.
KW - Band structure
KW - Density functional theory
KW - Graphene
KW - Molybdenum disulfide
KW - Nitrogen doping
UR - https://www.scopus.com/pages/publications/105024238753
U2 - 10.1016/j.jpowsour.2025.238858
DO - 10.1016/j.jpowsour.2025.238858
M3 - 文章
AN - SCOPUS:105024238753
SN - 0378-7753
VL - 663
JO - Journal of Power Sources
JF - Journal of Power Sources
M1 - 238858
ER -