Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te

Gangqiang Zha; Wanqi Jie; Tingting Tan; Linghang Wang; Dongmei Zeng

doi:10.1016/j.msea.2006.06.079

Dislocation-induced IR absorption and photoluminescence emission in Cd_0.96Zn_0.04Te

Gangqiang Zha
, Wanqi Jie
, Tingting Tan
, Linghang Wang
, Dongmei Zeng

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44% after deformation from 64% before. The polarization absorption of dangling-bond electrons in dislocations should be responsible for the decrease of IR transmittance. In photoluminescence measurement, the shallow donor-acceptor pair transition peak at 1.557 eV and its first longitudinal optical phonon replica were detected in CdZnTe after deformation. In defect-related region, a new band D_complex located at 1.508 eV appeared, which should be attributed to defect levels introduced by dislocations.

源语言	英语
页（从-至）	126-128
页数	3
期刊	Materials Science and Engineering: A
卷	432
期	1-2
DOI	https://doi.org/10.1016/j.msea.2006.06.079
出版状态	已出版 - 25 9月 2006

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title = "Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te",

abstract = "Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44\% after deformation from 64\% before. The polarization absorption of dangling-bond electrons in dislocations should be responsible for the decrease of IR transmittance. In photoluminescence measurement, the shallow donor-acceptor pair transition peak at 1.557 eV and its first longitudinal optical phonon replica were detected in CdZnTe after deformation. In defect-related region, a new band Dcomplex located at 1.508 eV appeared, which should be attributed to defect levels introduced by dislocations.",

keywords = "CdZnTe, Dislocations, IR transmittance, PL",

author = "Gangqiang Zha and Wanqi Jie and Tingting Tan and Linghang Wang and Dongmei Zeng",

year = "2006",

month = sep,

day = "25",

doi = "10.1016/j.msea.2006.06.079",

language = "英语",

volume = "432",

pages = "126--128",

journal = "Materials Science and Engineering: A",

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TY - JOUR

T1 - Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te

AU - Zha, Gangqiang

AU - Jie, Wanqi

AU - Tan, Tingting

AU - Wang, Linghang

AU - Zeng, Dongmei

PY - 2006/9/25

Y1 - 2006/9/25

N2 - Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44% after deformation from 64% before. The polarization absorption of dangling-bond electrons in dislocations should be responsible for the decrease of IR transmittance. In photoluminescence measurement, the shallow donor-acceptor pair transition peak at 1.557 eV and its first longitudinal optical phonon replica were detected in CdZnTe after deformation. In defect-related region, a new band Dcomplex located at 1.508 eV appeared, which should be attributed to defect levels introduced by dislocations.

AB - Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44% after deformation from 64% before. The polarization absorption of dangling-bond electrons in dislocations should be responsible for the decrease of IR transmittance. In photoluminescence measurement, the shallow donor-acceptor pair transition peak at 1.557 eV and its first longitudinal optical phonon replica were detected in CdZnTe after deformation. In defect-related region, a new band Dcomplex located at 1.508 eV appeared, which should be attributed to defect levels introduced by dislocations.

KW - CdZnTe

KW - Dislocations

KW - IR transmittance

KW - PL

UR - https://www.scopus.com/pages/publications/33747788351

U2 - 10.1016/j.msea.2006.06.079

DO - 10.1016/j.msea.2006.06.079

M3 - 文章

AN - SCOPUS:33747788351

SN - 0921-5093

VL - 432

SP - 126

EP - 128

JO - Materials Science and Engineering: A

JF - Materials Science and Engineering: A

IS - 1-2

ER -

Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te

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Dislocation-induced IR absorption and photoluminescence emission in Cd_0.96Zn_0.04Te