TY - JOUR
T1 - Diffusion-controlled microstructure evolution during the reaction of liquid silicon with B4C
AU - Chen, Lingzhi
AU - Dang, Xiaolin
AU - He, Tao
AU - Qiu, Chengbo
AU - Yu, Zhiyang
AU - Ma, Xiaokang
AU - Zhao, Donglin
AU - Fan, Xiaomeng
N1 - Publisher Copyright:
© 2026 Elsevier Ltd
PY - 2026/11
Y1 - 2026/11
N2 - The reaction mechanism between B4C and liquid silicon was systematically studied in this work. By controlling the infiltration time of liquid silicon, the evolution of phase composition and microstructure was elucidated. The resulting ceramics comprised primarily the ternary phase Si-containing B4C-type phase, SiC, SiBx, residual Si, and minor impurity phases. Unlike conventional Si activated systems dominated by rapid interfacial reactions, the Si-B4C system exhibits a diffusion-controlled transformation. Liquid Si diffuses into the B4C lattice and substitutes for carbon to form Si-containing B4C-type phase, while the released carbon reacts with Si to produce SiC. The microstructural evolution exhibits two distinctive features, with Si-containing B4C-type phase grains first coarsening and then refining, and SiC transforming from large, anisotropic plate-like crystals into fine, equiaxed grains. These transformations are governed by coupled diffusion, dissolution-reprecipitation, and cooling-driven solidification processes. The sample prepared with a holding time of 20 min exhibits the highest flexural strength of 228 ± 6 MPa, attributed to the larger grain size of Si-containing B4C-type phase and improved interfacial bonding between Si-containing B4C-type phase and residual Si.
AB - The reaction mechanism between B4C and liquid silicon was systematically studied in this work. By controlling the infiltration time of liquid silicon, the evolution of phase composition and microstructure was elucidated. The resulting ceramics comprised primarily the ternary phase Si-containing B4C-type phase, SiC, SiBx, residual Si, and minor impurity phases. Unlike conventional Si activated systems dominated by rapid interfacial reactions, the Si-B4C system exhibits a diffusion-controlled transformation. Liquid Si diffuses into the B4C lattice and substitutes for carbon to form Si-containing B4C-type phase, while the released carbon reacts with Si to produce SiC. The microstructural evolution exhibits two distinctive features, with Si-containing B4C-type phase grains first coarsening and then refining, and SiC transforming from large, anisotropic plate-like crystals into fine, equiaxed grains. These transformations are governed by coupled diffusion, dissolution-reprecipitation, and cooling-driven solidification processes. The sample prepared with a holding time of 20 min exhibits the highest flexural strength of 228 ± 6 MPa, attributed to the larger grain size of Si-containing B4C-type phase and improved interfacial bonding between Si-containing B4C-type phase and residual Si.
KW - BC
KW - Liquid silicon infiltration
KW - Microstructure
KW - Reaction formation mechanism
KW - SiC
UR - https://www.scopus.com/pages/publications/105049057000
U2 - 10.1016/j.msea.2026.151057
DO - 10.1016/j.msea.2026.151057
M3 - 文章
AN - SCOPUS:105049057000
SN - 0921-5093
VL - 976
JO - Materials Science and Engineering: A
JF - Materials Science and Engineering: A
M1 - 151057
ER -