Characterization and properties of Si3N4p/Si3N4 radome material prepared by chemical vapor infiltration

Yi Liu; Yong Sheng Liu; Li Tong Zhang; Lai Fei Cheng; Yong Dong Xu

Characterization and properties of Si₃N_4p/Si₃N₄ radome material prepared by chemical vapor infiltration

Yi Liu
, Yong Sheng Liu
, Li Tong Zhang
, Lai Fei Cheng
, Yong Dong Xu

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

10 引用（Scopus）

摘要

Si₃N_4p/Si₃N₄ radome material was prepared by chemical vapor infiltration (CVI) with SiCl₄-NH₃-H₂ systems. XRF analysis shows the specimen mainly contains Si, N, O three kinds of elements. XRD patterns indicate the sample consists of α-Si₃N₄, amorphous deposit, noncrystalline SiO₂, small amount of β-Si₃N₄ and Si. Amorphous deposit can be converted into α-Si₃N₄ and β-Si₃N₄ by high temperature heat treatment. SEM photographs show weak bonding and large pores exist among granulae. Maximum flexural strength of the samples is 94 MPa, and dielectric constants are between 4.1 and 4.8.

源语言	英语
页（从-至）	979-985
页数	7
期刊	Wuji Cailiao Xuebao/Journal of Inorganic Materials
卷	21
期	4
出版状态	已出版 - 7月 2006

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title = "Characterization and properties of Si3N4p/Si3N4 radome material prepared by chemical vapor infiltration",

abstract = "Si3N4p/Si3N4 radome material was prepared by chemical vapor infiltration (CVI) with SiCl4-NH3-H2 systems. XRF analysis shows the specimen mainly contains Si, N, O three kinds of elements. XRD patterns indicate the sample consists of α-Si3N4, amorphous deposit, noncrystalline SiO2, small amount of β-Si3N4 and Si. Amorphous deposit can be converted into α-Si3N4 and β-Si3N4 by high temperature heat treatment. SEM photographs show weak bonding and large pores exist among granulae. Maximum flexural strength of the samples is 94 MPa, and dielectric constants are between 4.1 and 4.8.",

keywords = "Chemical vapor infiltration (CVI), Dielectric constant, Flexural strength, SiN/SiN radome material",

author = "Yi Liu and Liu, \{Yong Sheng\} and Zhang, \{Li Tong\} and Cheng, \{Lai Fei\} and Xu, \{Yong Dong\}",

year = "2006",

month = jul,

language = "英语",

volume = "21",

pages = "979--985",

journal = "Wuji Cailiao Xuebao/Journal of Inorganic Materials",

issn = "1000-324X",

publisher = "Science Press ",

number = "4",

}

TY - JOUR

T1 - Characterization and properties of Si3N4p/Si3N4 radome material prepared by chemical vapor infiltration

AU - Liu, Yi

AU - Liu, Yong Sheng

AU - Zhang, Li Tong

AU - Cheng, Lai Fei

AU - Xu, Yong Dong

PY - 2006/7

Y1 - 2006/7

N2 - Si3N4p/Si3N4 radome material was prepared by chemical vapor infiltration (CVI) with SiCl4-NH3-H2 systems. XRF analysis shows the specimen mainly contains Si, N, O three kinds of elements. XRD patterns indicate the sample consists of α-Si3N4, amorphous deposit, noncrystalline SiO2, small amount of β-Si3N4 and Si. Amorphous deposit can be converted into α-Si3N4 and β-Si3N4 by high temperature heat treatment. SEM photographs show weak bonding and large pores exist among granulae. Maximum flexural strength of the samples is 94 MPa, and dielectric constants are between 4.1 and 4.8.

AB - Si3N4p/Si3N4 radome material was prepared by chemical vapor infiltration (CVI) with SiCl4-NH3-H2 systems. XRF analysis shows the specimen mainly contains Si, N, O three kinds of elements. XRD patterns indicate the sample consists of α-Si3N4, amorphous deposit, noncrystalline SiO2, small amount of β-Si3N4 and Si. Amorphous deposit can be converted into α-Si3N4 and β-Si3N4 by high temperature heat treatment. SEM photographs show weak bonding and large pores exist among granulae. Maximum flexural strength of the samples is 94 MPa, and dielectric constants are between 4.1 and 4.8.

KW - Chemical vapor infiltration (CVI)

KW - Dielectric constant

KW - Flexural strength

KW - SiN/SiN radome material

UR - https://www.scopus.com/pages/publications/33749848729

M3 - 文章

AN - SCOPUS:33749848729

SN - 1000-324X

VL - 21

SP - 979

EP - 985

JO - Wuji Cailiao Xuebao/Journal of Inorganic Materials

JF - Wuji Cailiao Xuebao/Journal of Inorganic Materials

IS - 4

ER -

Characterization and properties of Si3N4p/Si3N4 radome material prepared by chemical vapor infiltration

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Characterization and properties of Si₃N_4p/Si₃N₄ radome material prepared by chemical vapor infiltration