跳到主要导航 跳到搜索 跳到主要内容

Catalyst-free growth of high purity 3C-SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction

  • Hongjiao Lin
  • , Hejun Li
  • , Qingliang Shen
  • , Xiaohong Shi
  • , Xinfa Tian
  • , Lingjun Guo
  • Northwestern Polytechnical University Xian

科研成果: 期刊稿件文章同行评审

30 引用 (Scopus)

摘要

3C-SiC nanowires have been synthesized without any catalyst by carbothermal reduction method, which obtained silicon and carbon source from sol-gel impregnation and isothermal chemical vapor immersion (ICVI) process respectively. The microstructure analysis by SEM showed the nanowires with a diameter of ∼200 nm and a length of several millimeters were hierarchical. TEM images and XRD data from the nanowires revealed them to have the cubic 3C-SiC structure. The vapor solid epitaxial mechanism was also proposed to explain the growth process.

源语言英语
页(从-至)86-89
页数4
期刊Materials Letters
212
DOI
出版状态已出版 - 1 2月 2018

指纹

探究 'Catalyst-free growth of high purity 3C-SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction' 的科研主题。它们共同构成独一无二的指纹。

引用此