摘要
3C-SiC nanowires have been synthesized without any catalyst by carbothermal reduction method, which obtained silicon and carbon source from sol-gel impregnation and isothermal chemical vapor immersion (ICVI) process respectively. The microstructure analysis by SEM showed the nanowires with a diameter of ∼200 nm and a length of several millimeters were hierarchical. TEM images and XRD data from the nanowires revealed them to have the cubic 3C-SiC structure. The vapor solid epitaxial mechanism was also proposed to explain the growth process.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 86-89 |
| 页数 | 4 |
| 期刊 | Materials Letters |
| 卷 | 212 |
| DOI | |
| 出版状态 | 已出版 - 1 2月 2018 |
指纹
探究 'Catalyst-free growth of high purity 3C-SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction' 的科研主题。它们共同构成独一无二的指纹。引用此
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