摘要
A blue organic light emitting diode (OLED) with a graded junction (GJ) at hole transporting layer (HTL) and emitted layer (EML) interface was constructed. Compared with the conventional heterojunction (HJ) OLED, GJ OLED exhibited significantly improved stability, and the half lifetime achieved 6998 h at initial luminance 100 cd/m2, which is more than 6 times longer than that of HJ OLED. And a Gaq thin layer is inserted in the TBADN/Alq interface, the step barrier from Alq Gaq to TBADN for electron injection is though formed. The GJ devices with Gaq layer show 20% higher efficiency than that of conventional and 7 times longer lifetime than that of HJ one.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 893-895 |
| 页数 | 3 |
| 期刊 | Guangdianzi Jiguang/Journal of Optoelectronics Laser |
| 卷 | 18 |
| 期 | 8 |
| 出版状态 | 已出版 - 8月 2007 |
| 已对外发布 | 是 |
指纹
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