Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Yan Sun; Zishu Zhou; Zhen Huang; Jiangbin Wu; Liujiang Zhou; Yang Cheng; Jinqiu Liu; Chao Zhu; Maotao Yu; Peng Yu; Wei Zhu; Yue Liu; Jian Zhou; Bowen Liu; Hongguang Xie; Yi Cao; Hai Li; Xinran Wang; Kaihui Liu; Xiaoyong Wang; Jianpu Wang; Lin Wang; Wei Huang

doi:10.1002/adma.201806562

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Yan Sun
, Zishu Zhou
, Zhen Huang
, Jiangbin Wu
, Liujiang Zhou
, Yang Cheng
, Jinqiu Liu
, Chao Zhu
, Maotao Yu
, Peng Yu
, Wei Zhu
, Yue Liu
, Jian Zhou
, Bowen Liu
, Hongguang Xie
, Yi Cao
, Hai Li
, Xinran Wang
, Kaihui Liu
, Xiaoyong Wang

Jianpu Wang, Lin Wang, Wei Huang

柔性电子研究院

Nanjing Tech University
University of Southern California
Center for Nonlinear Studies
Peking University
Nanjing University
Nanyang Technological University
Sun Yat-Sen University
Westlake University

科研成果: 期刊稿件 › 文章 › 同行评审

116 引用（Scopus）

摘要

To explore new constituents in two-dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Herein, PbI ₂ crystals as thin as a few layers are synthesized, particularly through a facile low-temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI ₂ -based interfacial semiconductors, PbI ₂ crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS ₂ is enhanced in MoS ₂ /PbI ₂ stacks, while a dramatic photoluminescence quenching of WS ₂ and WSe ₂ is revealed in WS ₂ /PbI ₂ and WSe ₂ /PbI ₂ stacks. This is attributed to the effective heterojunction formation between PbI ₂ and these monolayers; type I band alignment in MoS ₂ /PbI ₂ stacks, where fast-transferred charge carriers accumulate in MoS ₂ with high emission efficiency, results in photoluminescence enhancement, and type II in WS ₂ /PbI ₂ and WSe ₂ /PbI ₂ stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS ₂ , WS ₂ , and WSe ₂ monolayers with similar electronic structures show completely distinct light–matter interactions when interfacing with PbI ₂ , providing unprecedented capabilities to engineer the device performance of 2D heterostructures.

源语言	英语
期刊论文编号	1806562
期刊	Advanced Materials
卷	31
期	17
DOI	https://doi.org/10.1002/adma.201806562
出版状态	已出版 - 25 4月 2019

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Sun, Y., Zhou, Z., Huang, Z., Wu, J., Zhou, L., Cheng, Y., Liu, J., Zhu, C., Yu, M., Yu, P., Zhu, W., Liu, Y., Zhou, J., Liu, B., Xie, H., Cao, Y., Li, H., Wang, X., Liu, K., ... Huang, W. (2019). Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals. Advanced Materials, 31(17), 期刊论文 1806562. https://doi.org/10.1002/adma.201806562

@article{84d41a7ff5ad4089b94402e4320c7278,

title = "Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals",

abstract = " To explore new constituents in two-dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Herein, PbI 2 crystals as thin as a few layers are synthesized, particularly through a facile low-temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI 2 -based interfacial semiconductors, PbI 2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS 2 is enhanced in MoS 2 /PbI 2 stacks, while a dramatic photoluminescence quenching of WS 2 and WSe 2 is revealed in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks. This is attributed to the effective heterojunction formation between PbI 2 and these monolayers; type I band alignment in MoS 2 /PbI 2 stacks, where fast-transferred charge carriers accumulate in MoS 2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS 2 , WS 2 , and WSe 2 monolayers with similar electronic structures show completely distinct light{\textendash}matter interactions when interfacing with PbI 2 , providing unprecedented capabilities to engineer the device performance of 2D heterostructures.",

keywords = "2D materials, band alignment, heterostructures, interlayer interactions, lead iodide",

author = "Yan Sun and Zishu Zhou and Zhen Huang and Jiangbin Wu and Liujiang Zhou and Yang Cheng and Jinqiu Liu and Chao Zhu and Maotao Yu and Peng Yu and Wei Zhu and Yue Liu and Jian Zhou and Bowen Liu and Hongguang Xie and Yi Cao and Hai Li and Xinran Wang and Kaihui Liu and Xiaoyong Wang and Jianpu Wang and Lin Wang and Wei Huang",

note = "Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2019",

month = apr,

day = "25",

doi = "10.1002/adma.201806562",

language = "英语",

volume = "31",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "17",

}

Sun, Y, Zhou, Z, Huang, Z, Wu, J, Zhou, L, Cheng, Y, Liu, J, Zhu, C, Yu, M, Yu, P, Zhu, W, Liu, Y, Zhou, J, Liu, B, Xie, H, Cao, Y, Li, H, Wang, X, Liu, K, Wang, X, Wang, J, Wang, L & Huang, W 2019, 'Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals', Advanced Materials, 卷 31, 号码 17, 1806562. https://doi.org/10.1002/adma.201806562

TY - JOUR

T1 - Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

AU - Sun, Yan

AU - Zhou, Zishu

AU - Huang, Zhen

AU - Wu, Jiangbin

AU - Zhou, Liujiang

AU - Cheng, Yang

AU - Liu, Jinqiu

AU - Zhu, Chao

AU - Yu, Maotao

AU - Yu, Peng

AU - Zhu, Wei

AU - Liu, Yue

AU - Zhou, Jian

AU - Liu, Bowen

AU - Xie, Hongguang

AU - Cao, Yi

AU - Li, Hai

AU - Wang, Xinran

AU - Liu, Kaihui

AU - Wang, Xiaoyong

AU - Wang, Jianpu

AU - Wang, Lin

AU - Huang, Wei

PY - 2019/4/25

Y1 - 2019/4/25

N2 - To explore new constituents in two-dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Herein, PbI 2 crystals as thin as a few layers are synthesized, particularly through a facile low-temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI 2 -based interfacial semiconductors, PbI 2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS 2 is enhanced in MoS 2 /PbI 2 stacks, while a dramatic photoluminescence quenching of WS 2 and WSe 2 is revealed in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks. This is attributed to the effective heterojunction formation between PbI 2 and these monolayers; type I band alignment in MoS 2 /PbI 2 stacks, where fast-transferred charge carriers accumulate in MoS 2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS 2 , WS 2 , and WSe 2 monolayers with similar electronic structures show completely distinct light–matter interactions when interfacing with PbI 2 , providing unprecedented capabilities to engineer the device performance of 2D heterostructures.

AB - To explore new constituents in two-dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Herein, PbI 2 crystals as thin as a few layers are synthesized, particularly through a facile low-temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI 2 -based interfacial semiconductors, PbI 2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS 2 is enhanced in MoS 2 /PbI 2 stacks, while a dramatic photoluminescence quenching of WS 2 and WSe 2 is revealed in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks. This is attributed to the effective heterojunction formation between PbI 2 and these monolayers; type I band alignment in MoS 2 /PbI 2 stacks, where fast-transferred charge carriers accumulate in MoS 2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS 2 , WS 2 , and WSe 2 monolayers with similar electronic structures show completely distinct light–matter interactions when interfacing with PbI 2 , providing unprecedented capabilities to engineer the device performance of 2D heterostructures.

KW - 2D materials

KW - band alignment

KW - heterostructures

KW - interlayer interactions

KW - lead iodide

UR - https://www.scopus.com/pages/publications/85064542765

U2 - 10.1002/adma.201806562

DO - 10.1002/adma.201806562

M3 - 文章

C2 - 30861234

AN - SCOPUS:85064542765

SN - 0935-9648

VL - 31

JO - Advanced Materials

JF - Advanced Materials

IS - 17

M1 - 1806562

ER -

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

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