Auger-type process in ultrathin ReS₂

The dramatic enhancement of charge carrier interaction makes many-body effects of great prominence in two-dimensional materials. Here we report the defect-assisted Auger scattering combined with band-to-band Auger recombination as playing the dominant recovery mechanism in the charge carriers of atomically thin-layered ReS2. Time resolved transient absorption spectra investigation reveals two different decay processes over the visible and nearinfrared range, which is attributed to the shallow and deep defects introduced by the existence of sulfur (S) vacancy. A rate equation system is invoked to rationalize our peculiar pump and temperature dependence of carrier dynamics quantitatively. These findings provide theoretical insights into the significant role played by nonradiative Auger processes and may pave the way for the development of diverse ReS2-based high performance photonic and optoelectronic devices.