Atomic structure of CdZnTe single crystal surface

The surface of semiconductors is a special area with features different from the bulk material. The atomic and electronic structures of surface will affect the properties of the semiconductor. In this paper, the atomic structures of the clean CdZnTe (110), (111) A surfaces and (111) B surfaces obtained by Ar⁺ sputtering and annealing in situ are observed by low-energy electron diffraction. The (110) surface is stable, and there is no surface reconstruction. A new reconstruction, (3^1/2 × 3^1/2)R30° is discovered on the (111) A surface, and (2 × 2) reconstructure on (111) B surface by Te displacement which is explained in terms of a vacancy model.