摘要
This study resolves the atomic-layer structure of the T1p precursor and establishes the complete T1p-to-T1 transformation mechanism in Al-Li-Cu alloys. Atomic-resolution HAADF-STEM imaging reveals that T1p is a coherent five-layer modulation composed of alternating Cu-rich and Li-rich {111}Al planes formed purely by solute diffusion. Comparative analysis with the seven-layer T1 structure demonstrates that the T1p → T1 transition involves two sequential Shockley partial-dislocation slips on layers i and i-2. Thereafter, Al diffusion and layer-specific atomic rearrangement contribute to the completion of the transformation. These coupled processes convert the FCC stacking of the matrix into the HCP-like sequence of T1 and generate its final lattice configuration. The findings provide a unified atomistic framework for understanding T1 nucleation and growth in Al-Li-Cu alloys.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 116145 |
| 期刊 | Materials Characterization |
| 卷 | 233 |
| DOI | |
| 出版状态 | 已出版 - 3月 2026 |
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