TY - GEN
T1 - Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser induced damage thresholds
AU - Wei, Yaowei
AU - Pan, Feng
AU - Zhang, Qinghua
AU - Ma, Ping
N1 - Publisher Copyright:
© OSA 2016.
PY - 2016
Y1 - 2016
N2 - Previous research on the laser damage resistance of thin film deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically the LIDT of the Al2O3 thin film reached 40 J/cm2. The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm2, the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high power laser systems.
AB - Previous research on the laser damage resistance of thin film deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically the LIDT of the Al2O3 thin film reached 40 J/cm2. The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm2, the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high power laser systems.
KW - Atomic layer deposition
KW - Laser induced damage threshold
KW - Optical properties
UR - https://www.scopus.com/pages/publications/85085849748
U2 - 10.1364/oic.2016.wb.10
DO - 10.1364/oic.2016.wb.10
M3 - 会议稿件
AN - SCOPUS:85085849748
SN - 9781943580132
T3 - Optics InfoBase Conference Papers
BT - Optical Interference Coatings, OIC 2016
PB - Optica Publishing Group (formerly OSA)
T2 - Optical Interference Coatings, OIC 2016
Y2 - 19 June 2016 through 24 June 2016
ER -