TY - GEN
T1 - An Improved SOI Resonant Pressure Sensor using Atmospheric Packaging
AU - Ren, Sen
AU - Xie, Jianbing
AU - Shen, Qiang
AU - Wang, Fei
AU - Yuan, Weizheng
AU - Zhang, Jinkuan
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/8/20
Y1 - 2018/8/20
N2 - An improved atmospheric packaged SOI resonant pressure sensor is presented. A special anchor structure using suspended connecting truss is developed to suppress the vertical position shift of the resonator when the diaphragm deflects, and a stress isolating structure is introduced to improve the performance of the resonant pressure sensor. Experimental results show that the vertical position shift of the resonator is reduced to only 7.3% compared with conventional anchor design. Over the full scale pressure range of 3.5-280 kPa, the pressure sensitivity is 10.86 Hz/kPa, with the nonlinearity is 0.0138%FS, the hysteresis error is 0.0047%FS, the repeatability error is 0.0071%FS, and the accuracy is better than 0.02%FS.
AB - An improved atmospheric packaged SOI resonant pressure sensor is presented. A special anchor structure using suspended connecting truss is developed to suppress the vertical position shift of the resonator when the diaphragm deflects, and a stress isolating structure is introduced to improve the performance of the resonant pressure sensor. Experimental results show that the vertical position shift of the resonator is reduced to only 7.3% compared with conventional anchor design. Over the full scale pressure range of 3.5-280 kPa, the pressure sensitivity is 10.86 Hz/kPa, with the nonlinearity is 0.0138%FS, the hysteresis error is 0.0047%FS, the repeatability error is 0.0071%FS, and the accuracy is better than 0.02%FS.
UR - https://www.scopus.com/pages/publications/85053545854
U2 - 10.1109/INEC.2018.8441926
DO - 10.1109/INEC.2018.8441926
M3 - 会议稿件
AN - SCOPUS:85053545854
SN - 9781538642504
T3 - 2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018
SP - 37
EP - 38
BT - 2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th IEEE International Nanoelectronics Conferences, INEC 2018
Y2 - 3 January 2018 through 5 January 2018
ER -