摘要
In this work, accurate ab initio total-energy calculations were performed using the full-potential linearized augmented plane-wave (FP-LAPW) method to investigate the equilibrium structural, electronic, elastic and optical properties of doped and pristine Cu3N. The lattice parameters of Cu3NLa (4.299 Å) and Cu3NCe (4.246 Å) were found to be larger than that of Cu3N (3.834 Å), indicating that the doped Cu3N was transformed from a semiconductor into a conductor. The results for the elastic constants revealed that Cu3N, Cu3NLa and Cu3NCe all possess stable mechanical properties, suggesting that they are promising candidates for electronic and optical device applications.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 221-227 |
| 页数 | 7 |
| 期刊 | Computational Materials Science |
| 卷 | 95 |
| DOI | |
| 出版状态 | 已出版 - 19 8月 2014 |
| 已对外发布 | 是 |
学术指纹
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