TY - JOUR
T1 - A two-stage technique for single crystal growth of HgCdTe using a pressurized Bridgman method
AU - Wang, Yue
AU - Li, Quanbao
AU - Han, Qinglin
AU - Ma, Qinghua
AU - Song, Bingwen
AU - Jie, Wanqi
AU - Zhou, Yaohe
AU - Inatomi, Yuko
PY - 2004/3/1
Y1 - 2004/3/1
N2 - A two-stage technique has been used to grow large diameter Hg 1-xCdxTe crystals (x=0.214) using a pressurized Bridgman (P-Bridgman) method, with a starting charge of x=0.06. The two-stage technique has enabled the growth of large crystalline ingots of HgCdTe 40mm in diameter at the very low growth temperature of 680-720°C. It was shown that the HgCdTe crystal had a homogeneous composition of x=0.214 along the growth direction.
AB - A two-stage technique has been used to grow large diameter Hg 1-xCdxTe crystals (x=0.214) using a pressurized Bridgman (P-Bridgman) method, with a starting charge of x=0.06. The two-stage technique has enabled the growth of large crystalline ingots of HgCdTe 40mm in diameter at the very low growth temperature of 680-720°C. It was shown that the HgCdTe crystal had a homogeneous composition of x=0.214 along the growth direction.
KW - A1. Low temperature growth
KW - A2. Pressurized Bridgman
KW - A2. Two-stage technique
KW - B1. Large diameter HgCdTe
UR - https://www.scopus.com/pages/publications/1242263863
U2 - 10.1016/j.jcrysgro.2003.11.077
DO - 10.1016/j.jcrysgro.2003.11.077
M3 - 文章
AN - SCOPUS:1242263863
SN - 0022-0248
VL - 263
SP - 273
EP - 282
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -