TY - GEN
T1 - A High-Power-Density Synchronous GaN Class-F Rectifier MMIC for On-Chip MWPT Micro-System
AU - Zhang, Jingyuan
AU - Zhang, Hao
AU - Wang, Han
AU - Yan, Xu
AU - Guo, Yongxin
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - This paper introduces a fully integrated synchronous class-F rectifier monolithic microwave integrated circuit (MMIC) using GaN HEMT technology. The design is based on the time-reversed dual of the corresponding class-F power amplifier (PA). Up to 4th harmonics are controlled for not only the efficiency enhancement but also the fundamental impedance matching. With the proposed method, the rectifier size is controlled as 1.02 mm2, and the rectification power density is up to 2598 kW/m2. The maximum drain efficiency (DE) of the proposed class-F PA is 65.4% at 10 GHz, and the RF-DC efficiency is 65.2% with a 205 W load. With low temperature co-fired ceramic (LTCC) technology, the proposed synchronous rectifier can be integrated into the receiver of a minimized on-chip microwave wireless power transfer (MWPT) micro-system.
AB - This paper introduces a fully integrated synchronous class-F rectifier monolithic microwave integrated circuit (MMIC) using GaN HEMT technology. The design is based on the time-reversed dual of the corresponding class-F power amplifier (PA). Up to 4th harmonics are controlled for not only the efficiency enhancement but also the fundamental impedance matching. With the proposed method, the rectifier size is controlled as 1.02 mm2, and the rectification power density is up to 2598 kW/m2. The maximum drain efficiency (DE) of the proposed class-F PA is 65.4% at 10 GHz, and the RF-DC efficiency is 65.2% with a 205 W load. With low temperature co-fired ceramic (LTCC) technology, the proposed synchronous rectifier can be integrated into the receiver of a minimized on-chip microwave wireless power transfer (MWPT) micro-system.
KW - GaN
KW - Synchronous rectifier
KW - monolithic microwave integrated circuit (MMIC)
UR - https://www.scopus.com/pages/publications/105012021537
U2 - 10.1109/RFIT60557.2024.10812511
DO - 10.1109/RFIT60557.2024.10812511
M3 - 会议稿件
AN - SCOPUS:105012021537
T3 - 2024 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2024 - Proceedings
BT - 2024 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2024 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2024
Y2 - 28 August 2024 through 30 August 2024
ER -