超 快 激 光 辅 助 金 属 微 结 构 等 效 定 域 电 化 学 沉 积 研 究(特 邀)

Objective The construction of interfacial architectures in two-dimensional metal microstructure arrays constitutes the physical foundation for electromagnetic modulation, optoelectronic detection, and optoelectronic sensing in functional surface devices. Therefore, the development of high-efficiency and high-quality fabrication techniques is of significant scientific and practical importance. To address the low efficiency, poor compactness, and weak interfacial bonding associated with conventional fabrication methods, an ultrafast laser-assisted equivalent localized electrochemical deposition technique is proposed. Methods By employing ultrafast laser direct writing to selectively induce ordered or disordered nanostructures on material surfaces, the field-enhancement effect under an applied electric field is utilized to activate electrochemical reactions. These nanostructures provide robust nucleation and anchoring sites, enabling full-area parallel localized electrochemical deposition of metal microstructures under conventional electroplating conditions, thereby overcoming the challenges associated with high-quality and high-efficiency fabrication of interfacial architectures in two-dimensional metal microstructure arrays. Results and Discussions Experimental results demonstrate that the deposited copper structures exhibit an ultrasmooth surface with a profile roughness as low as 6.742 nm, a hardness of up to 1.44 GPa, and a strong interlocking interface with the silicon carbide substrate. Combined with ultrafast laser rapid scanning, this process enables efficient fabrication of arrayed microstructures comprising 8547 units within 6 min, demonstrating significant application potential and value. Conclusions We propose a fabrication method for two-dimensional metal microstructures based on the combination of ultrafast laser selective surface modification and electrochemical deposition, which enables flexible patterned deposition of arbitrary microstructures. Experimental results demonstrate that the metal structures prepared by this method exhibit a dense internal microstructure and form a stable interlocking interface with the silicon carbide substrate, providing a structural basis for achieving excellent interfacial bonding strength. This approach is expected to provide a new technological pathway for the scalable fabrication of two-dimensional metal microstructures in microelectronic devices, optoelectronic functional surfaces, and highly integrated systems.