Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector

Yuanyuan Du; Wanqi Jie; Tao Wang; Yadong Xu; Liying Yin; Pengfei Yu; Gangqiang Zha

doi:10.1016/j.jcrysgro.2010.11.086

Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector

Yuanyuan Du
, Wanqi Jie
, Tao Wang
, Yadong Xu
, Liying Yin
, Pengfei Yu
, Gangqiang Zha

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

CdMnTe (CMT) has been recently considered to be a good candidate as a promising material for the manufacture of room-temperature nuclear radiation detectors due to its better lattice strengthening, wider band gap energy and low segregation potential. This paper reports the recent progress of detector-grade CMT crystals in Northwestern Polytechnical University. CdMnTe:In ingots with diameter of 30 mm were grown using a Modified Vertical Bridgman (MVB) method. Currentvoltage measurements were performed on single element planar configuration structure with Au electrode and the obtained resistivity of CMT samples was up to 6.19×10¹⁰ Ω cm. PL spectra and IR transmittance measurement on the samples were revealed that the as-grown CMT crystal possess of high quality. IR microscope showed that the Te inclusions in CMT are 1020 μm in diameter and within the range 1×10 ⁴3×10⁴ cm^-3 in concentration. The ²⁴¹Am gamma-ray spectral was obtained for the CMT single planar detector with the energy resolution of 12.38% of the 59.5 keV peak. The mobility-lifetime products for the electron and hole of the as-grown CMT crystals were evaluated to be 1.22×10^-3 cm² V ^-1 and 3.0×10^-5 cm² V^-1, respectively.

Original language	English
Pages (from-to)	1062-1066
Number of pages	5
Journal	Journal of Crystal Growth
Volume	318
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.11.086
State	Published - 1 Mar 2011

Keywords

A1. Characterization
A1. Radiation
A2. Bridgman technique
B1. Cadmium compounds
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2010.11.086

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title = "Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector",

abstract = "CdMnTe (CMT) has been recently considered to be a good candidate as a promising material for the manufacture of room-temperature nuclear radiation detectors due to its better lattice strengthening, wider band gap energy and low segregation potential. This paper reports the recent progress of detector-grade CMT crystals in Northwestern Polytechnical University. CdMnTe:In ingots with diameter of 30 mm were grown using a Modified Vertical Bridgman (MVB) method. Currentvoltage measurements were performed on single element planar configuration structure with Au electrode and the obtained resistivity of CMT samples was up to 6.19×1010 Ω cm. PL spectra and IR transmittance measurement on the samples were revealed that the as-grown CMT crystal possess of high quality. IR microscope showed that the Te inclusions in CMT are 1020 μm in diameter and within the range 1×10 43×104 cm-3 in concentration. The 241Am gamma-ray spectral was obtained for the CMT single planar detector with the energy resolution of 12.38\% of the 59.5 keV peak. The mobility-lifetime products for the electron and hole of the as-grown CMT crystals were evaluated to be 1.22×10-3 cm2 V -1 and 3.0×10-5 cm2 V-1, respectively.",

keywords = "A1. Characterization, A1. Radiation, A2. Bridgman technique, B1. Cadmium compounds, B2. Semiconducting II-VI materials",

author = "Yuanyuan Du and Wanqi Jie and Tao Wang and Yadong Xu and Liying Yin and Pengfei Yu and Gangqiang Zha",

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T1 - Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector

AU - Du, Yuanyuan

AU - Jie, Wanqi

AU - Wang, Tao

AU - Xu, Yadong

AU - Yin, Liying

AU - Yu, Pengfei

AU - Zha, Gangqiang

PY - 2011/3/1

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N2 - CdMnTe (CMT) has been recently considered to be a good candidate as a promising material for the manufacture of room-temperature nuclear radiation detectors due to its better lattice strengthening, wider band gap energy and low segregation potential. This paper reports the recent progress of detector-grade CMT crystals in Northwestern Polytechnical University. CdMnTe:In ingots with diameter of 30 mm were grown using a Modified Vertical Bridgman (MVB) method. Currentvoltage measurements were performed on single element planar configuration structure with Au electrode and the obtained resistivity of CMT samples was up to 6.19×1010 Ω cm. PL spectra and IR transmittance measurement on the samples were revealed that the as-grown CMT crystal possess of high quality. IR microscope showed that the Te inclusions in CMT are 1020 μm in diameter and within the range 1×10 43×104 cm-3 in concentration. The 241Am gamma-ray spectral was obtained for the CMT single planar detector with the energy resolution of 12.38% of the 59.5 keV peak. The mobility-lifetime products for the electron and hole of the as-grown CMT crystals were evaluated to be 1.22×10-3 cm2 V -1 and 3.0×10-5 cm2 V-1, respectively.

AB - CdMnTe (CMT) has been recently considered to be a good candidate as a promising material for the manufacture of room-temperature nuclear radiation detectors due to its better lattice strengthening, wider band gap energy and low segregation potential. This paper reports the recent progress of detector-grade CMT crystals in Northwestern Polytechnical University. CdMnTe:In ingots with diameter of 30 mm were grown using a Modified Vertical Bridgman (MVB) method. Currentvoltage measurements were performed on single element planar configuration structure with Au electrode and the obtained resistivity of CMT samples was up to 6.19×1010 Ω cm. PL spectra and IR transmittance measurement on the samples were revealed that the as-grown CMT crystal possess of high quality. IR microscope showed that the Te inclusions in CMT are 1020 μm in diameter and within the range 1×10 43×104 cm-3 in concentration. The 241Am gamma-ray spectral was obtained for the CMT single planar detector with the energy resolution of 12.38% of the 59.5 keV peak. The mobility-lifetime products for the electron and hole of the as-grown CMT crystals were evaluated to be 1.22×10-3 cm2 V -1 and 3.0×10-5 cm2 V-1, respectively.

KW - A1. Characterization

KW - A1. Radiation

KW - A2. Bridgman technique

KW - B1. Cadmium compounds

KW - B2. Semiconducting II-VI materials

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JO - Journal of Crystal Growth

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ER -

Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector

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Keywords

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