Unlocking a High Photovoltage in BiVO4 Photoanodes via Repairing Oxygen-Defect-Induced Surface Traps Boosting Photoelectrochemical Performance

Wenhao Zou; Xin Ding; Hengjun Xie; Kai Hang Ye; Haoxian Shao; Long Zhao; Junwei Chen; Tongxin Tang; Xiaoxin Chen; Zhan Lin; Shanqing Zhang; Yang Cao; Kun Wang; Shuang Xiao; Songcan Wang; Shihe Yang

doi:10.1002/aenm.70990

Unlocking a High Photovoltage in BiVO₄ Photoanodes via Repairing Oxygen-Defect-Induced Surface Traps Boosting Photoelectrochemical Performance

Wenhao Zou
, Xin Ding
, Hengjun Xie
, Kai Hang Ye
, Haoxian Shao
, Long Zhao
, Junwei Chen
, Tongxin Tang
, Xiaoxin Chen
, Zhan Lin
, Shanqing Zhang
, Yang Cao
, Kun Wang
, Shuang Xiao
, Songcan Wang
, Shihe Yang

Institute of Flexible Electronics

Guangdong University of Technology
Xiamen University
Peking University
Sun Yat-Sen University
Maoming Green Chemical Industry Research Institute
Shenzhen Technology University

Research output: Contribution to journal › Article › peer-review

Abstract

Oxygen vacancy-rich bismuth vanadate (BiVO₄₋_x) photoanodes usually exhibit excellent bulk charge separation efficiency and relatively low onset potential, but the Fermi-level pinning effect leads to a relatively low photovoltage (V_ph). Herein, we propose a synergistic strategy of F element doping and in situ deposition of the NiCoBi co-catalyst to amplify the V_ph of BiVO₄₋_x. Systematic investigations demonstrate that F doping modifies the electronic structure of BiVO₄₋_x, increases the electron work function, and synergizes with the NiCoBi co-catalyst to repair surface defect states, thereby enhancing the V_ph of the F-BiVO₄₋_x/NiCoBi photoanode by 37.78% compared to its unmodified BiVO₄₋_x counterpart. Consequently, both organic oxidation reactions and water oxidation reactions are significantly activated. More importantly, the enhanced V_p_h can also improve the long-term operational stability of the photoanode. Such improvements in multiple performance metrics can provide a universal strategy for the design of next-generation photoelectrode materials.

Original language	English
Journal	Advanced Energy Materials
DOIs	https://doi.org/10.1002/aenm.70990
State	Accepted/In press - 2026

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

bismuth vanadate
electrode–electrolyte interface
photoanode

Access to Document

10.1002/aenm.70990

Cite this

Zou, W., Ding, X., Xie, H., Ye, K. H., Shao, H., Zhao, L., Chen, J., Tang, T., Chen, X., Lin, Z., Zhang, S., Cao, Y., Wang, K., Xiao, S., Wang, S., & Yang, S. (Accepted/In press). Unlocking a High Photovoltage in BiVO₄ Photoanodes via Repairing Oxygen-Defect-Induced Surface Traps Boosting Photoelectrochemical Performance. Advanced Energy Materials. https://doi.org/10.1002/aenm.70990

@article{44cf5775be7349a5a70703622f596665,

title = "Unlocking a High Photovoltage in BiVO4 Photoanodes via Repairing Oxygen-Defect-Induced Surface Traps Boosting Photoelectrochemical Performance",

abstract = "Oxygen vacancy-rich bismuth vanadate (BiVO4−x) photoanodes usually exhibit excellent bulk charge separation efficiency and relatively low onset potential, but the Fermi-level pinning effect leads to a relatively low photovoltage (Vph). Herein, we propose a synergistic strategy of F element doping and in situ deposition of the NiCoBi co-catalyst to amplify the Vph of BiVO4−x. Systematic investigations demonstrate that F doping modifies the electronic structure of BiVO4−x, increases the electron work function, and synergizes with the NiCoBi co-catalyst to repair surface defect states, thereby enhancing the Vph of the F-BiVO4−x/NiCoBi photoanode by 37.78\% compared to its unmodified BiVO4−x counterpart. Consequently, both organic oxidation reactions and water oxidation reactions are significantly activated. More importantly, the enhanced Vph can also improve the long-term operational stability of the photoanode. Such improvements in multiple performance metrics can provide a universal strategy for the design of next-generation photoelectrode materials.",

keywords = "bismuth vanadate, electrode–electrolyte interface, photoanode",

author = "Wenhao Zou and Xin Ding and Hengjun Xie and Ye, \{Kai Hang\} and Haoxian Shao and Long Zhao and Junwei Chen and Tongxin Tang and Xiaoxin Chen and Zhan Lin and Shanqing Zhang and Yang Cao and Kun Wang and Shuang Xiao and Songcan Wang and Shihe Yang",

note = "Publisher Copyright: {\textcopyright} 2026 Wiley-VCH GmbH.",

year = "2026",

doi = "10.1002/aenm.70990",

language = "英语",

journal = "Advanced Energy Materials",

issn = "1614-6832",

publisher = "John Wiley and Sons Inc",

}

TY - JOUR

T1 - Unlocking a High Photovoltage in BiVO4 Photoanodes via Repairing Oxygen-Defect-Induced Surface Traps Boosting Photoelectrochemical Performance

AU - Zou, Wenhao

AU - Ding, Xin

AU - Xie, Hengjun

AU - Ye, Kai Hang

AU - Shao, Haoxian

AU - Zhao, Long

AU - Chen, Junwei

AU - Tang, Tongxin

AU - Chen, Xiaoxin

AU - Lin, Zhan

AU - Zhang, Shanqing

AU - Cao, Yang

AU - Wang, Kun

AU - Xiao, Shuang

AU - Wang, Songcan

AU - Yang, Shihe

PY - 2026

Y1 - 2026

N2 - Oxygen vacancy-rich bismuth vanadate (BiVO4−x) photoanodes usually exhibit excellent bulk charge separation efficiency and relatively low onset potential, but the Fermi-level pinning effect leads to a relatively low photovoltage (Vph). Herein, we propose a synergistic strategy of F element doping and in situ deposition of the NiCoBi co-catalyst to amplify the Vph of BiVO4−x. Systematic investigations demonstrate that F doping modifies the electronic structure of BiVO4−x, increases the electron work function, and synergizes with the NiCoBi co-catalyst to repair surface defect states, thereby enhancing the Vph of the F-BiVO4−x/NiCoBi photoanode by 37.78% compared to its unmodified BiVO4−x counterpart. Consequently, both organic oxidation reactions and water oxidation reactions are significantly activated. More importantly, the enhanced Vph can also improve the long-term operational stability of the photoanode. Such improvements in multiple performance metrics can provide a universal strategy for the design of next-generation photoelectrode materials.

AB - Oxygen vacancy-rich bismuth vanadate (BiVO4−x) photoanodes usually exhibit excellent bulk charge separation efficiency and relatively low onset potential, but the Fermi-level pinning effect leads to a relatively low photovoltage (Vph). Herein, we propose a synergistic strategy of F element doping and in situ deposition of the NiCoBi co-catalyst to amplify the Vph of BiVO4−x. Systematic investigations demonstrate that F doping modifies the electronic structure of BiVO4−x, increases the electron work function, and synergizes with the NiCoBi co-catalyst to repair surface defect states, thereby enhancing the Vph of the F-BiVO4−x/NiCoBi photoanode by 37.78% compared to its unmodified BiVO4−x counterpart. Consequently, both organic oxidation reactions and water oxidation reactions are significantly activated. More importantly, the enhanced Vph can also improve the long-term operational stability of the photoanode. Such improvements in multiple performance metrics can provide a universal strategy for the design of next-generation photoelectrode materials.

KW - bismuth vanadate

KW - electrode–electrolyte interface

KW - photoanode

UR - https://www.scopus.com/pages/publications/105037497006

U2 - 10.1002/aenm.70990

DO - 10.1002/aenm.70990

M3 - 文章

AN - SCOPUS:105037497006

SN - 1614-6832

JO - Advanced Energy Materials

JF - Advanced Energy Materials

ER -