Ultraviolet photovoltaic effect in BiFeO 3/Nb-SrTiO 3 heterostructure

H. Li; K. X. Jin; S. H. Yang; J. Wang; M. He; B. C. Luo; J. Y. Wang; C. L. Chen; T. Wu

doi:10.1063/1.4759049

Ultraviolet photovoltaic effect in BiFeO ₃/Nb-SrTiO ₃ heterostructure

H. Li
, K. X. Jin
, S. H. Yang
, J. Wang
, M. He
, B. C. Luo
, J. Y. Wang
, C. L. Chen
, T. Wu

Northwestern Polytechnical University Xian
Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report on ultraviolet photovoltaic effects in a BiFeO ₃/Nb-doped SrTiO ₃ heterostructure prepared by a pulsed laser deposition method. The heterostructure exhibits rectifying behaviors in the temperature range from 80 K to 300 K. The photovoltage of heterostructure is about 0.33 V at T = 80 K when it is illuminated by a KrF excimer laser with a wavelength of 248 nm. The peak photovoltages decrease with increasing the temperature because of the accumulation of photogenerated carriers. Moreover, the peak photovoltages of heterostructure almost linearly increase with an increase of the power density of laser at T = 300 K. The results reveal some properties that may be useful for possible applications in multiferroic photoelectric devices.

Original language	English
Article number	083506
Journal	Journal of Applied Physics
Volume	112
Issue number	8
DOIs	https://doi.org/10.1063/1.4759049
State	Published - 15 Oct 2012
Externally published	Yes

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10.1063/1.4759049

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title = "Ultraviolet photovoltaic effect in BiFeO 3/Nb-SrTiO 3 heterostructure",

abstract = "We report on ultraviolet photovoltaic effects in a BiFeO 3/Nb-doped SrTiO 3 heterostructure prepared by a pulsed laser deposition method. The heterostructure exhibits rectifying behaviors in the temperature range from 80 K to 300 K. The photovoltage of heterostructure is about 0.33 V at T = 80 K when it is illuminated by a KrF excimer laser with a wavelength of 248 nm. The peak photovoltages decrease with increasing the temperature because of the accumulation of photogenerated carriers. Moreover, the peak photovoltages of heterostructure almost linearly increase with an increase of the power density of laser at T = 300 K. The results reveal some properties that may be useful for possible applications in multiferroic photoelectric devices.",

author = "H. Li and Jin, \{K. X.\} and Yang, \{S. H.\} and J. Wang and M. He and Luo, \{B. C.\} and Wang, \{J. Y.\} and Chen, \{C. L.\} and T. Wu",

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day = "15",

doi = "10.1063/1.4759049",

language = "英语",

volume = "112",

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T1 - Ultraviolet photovoltaic effect in BiFeO 3/Nb-SrTiO 3 heterostructure

AU - Li, H.

AU - Jin, K. X.

AU - Yang, S. H.

AU - Wang, J.

AU - He, M.

AU - Luo, B. C.

AU - Wang, J. Y.

AU - Chen, C. L.

AU - Wu, T.

PY - 2012/10/15

Y1 - 2012/10/15

N2 - We report on ultraviolet photovoltaic effects in a BiFeO 3/Nb-doped SrTiO 3 heterostructure prepared by a pulsed laser deposition method. The heterostructure exhibits rectifying behaviors in the temperature range from 80 K to 300 K. The photovoltage of heterostructure is about 0.33 V at T = 80 K when it is illuminated by a KrF excimer laser with a wavelength of 248 nm. The peak photovoltages decrease with increasing the temperature because of the accumulation of photogenerated carriers. Moreover, the peak photovoltages of heterostructure almost linearly increase with an increase of the power density of laser at T = 300 K. The results reveal some properties that may be useful for possible applications in multiferroic photoelectric devices.

AB - We report on ultraviolet photovoltaic effects in a BiFeO 3/Nb-doped SrTiO 3 heterostructure prepared by a pulsed laser deposition method. The heterostructure exhibits rectifying behaviors in the temperature range from 80 K to 300 K. The photovoltage of heterostructure is about 0.33 V at T = 80 K when it is illuminated by a KrF excimer laser with a wavelength of 248 nm. The peak photovoltages decrease with increasing the temperature because of the accumulation of photogenerated carriers. Moreover, the peak photovoltages of heterostructure almost linearly increase with an increase of the power density of laser at T = 300 K. The results reveal some properties that may be useful for possible applications in multiferroic photoelectric devices.

UR - https://www.scopus.com/pages/publications/84868377256

U2 - 10.1063/1.4759049

DO - 10.1063/1.4759049

M3 - 文章

AN - SCOPUS:84868377256

SN - 0021-8979

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 083506

ER -

Ultraviolet photovoltaic effect in BiFeO ₃/Nb-SrTiO ₃ heterostructure

Abstract

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