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TiO2 enhanced ultraviolet detection based on a graphene/Si Schottky diode

  • Miao Zhu
  • , Li Zhang
  • , Xinming Li
  • , Yijia He
  • , Xiao Li
  • , Fengmei Guo
  • , Xiaobei Zang
  • , Kunlin Wang
  • , Dan Xie
  • , Xuanhua Li
  • , Bingqing Wei
  • , Hongwei Zhu
  • Tsinghua University
  • National Center for Nanoscience and Technology
  • Northwestern Polytechnical University Xian
  • University of Delaware

Research output: Contribution to journalArticlepeer-review

48 Scopus citations

Abstract

Graphene/Si has been proved to form a quality Schottky junction with high photoelectric conversion efficiency at AM 1.5. However, for the ultraviolet portion of the incident light, the photoelectric performance will degrade significantly due to severe absorption and recombination at the front surface. Herein, to realize enhanced ultraviolet detection with a graphene/Si diode, TiO2 nanoparticles (NPs, 3-5 nm) are synthesized and spin-coated on the graphene surface to improve the photoresponse in the ultraviolet region. According to our results, the conversion efficiency of the graphene/Si diode at 420 nm and 350 nm increases by 72.7% and 100% respectively with TiO2 coating. Then C-2-V measurements of both TiO2 and graphene/Si diode are performed to analyze the electronic band structure of the TiO2/graphene/Si system, based on which we finally present the enhancement mechanism of photodetection using TiO2 NPs.

Original languageEnglish
Pages (from-to)8133-8138
Number of pages6
JournalJournal of Materials Chemistry A
Volume3
Issue number15
DOIs
StatePublished - 21 Apr 2015

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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