Abstract
Developing a universal strategy of the p–n homojunction engineering that could significantly boost electron mobility of electron transport layer (ETL) by two orders of magnitude. Proposing a new mechanism based on p–n homojunction to explain inhibited carrier loss at buried interface. Setting a new performance benchmark as high as 25.50% for planar perovskite solar cells employing TiO2 as ETLs.
Original language | English |
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Article number | 191 |
Journal | Nano-Micro Letters |
Volume | 16 |
Issue number | 1 |
DOIs | |
State | Published - Dec 2024 |
Keywords
- Buried interface
- Electron mobility
- Electron transport layer
- Perovskite solar cells
- p–n homojunction