Three-dimensional n-MoSe₂/GOx (n= 1T, 1T' and 2H) microsphere: Phase-modulation strategy and microwave absorbing mechanism

MoSe₂ was identified as a potential microwave absorber, whereas its practical application was predominantly affected by the ambiguous electromagnetic wave attenuation mechanism and dielectric properties. Here, we developed a novel phase assembly-modulating strategy to prepare n-MoSe₂/GOx (n = 1T, 1T' and 2H) composites, wherein phase modulation of MoSe₂ exerted a gainful effect on microwave absorption properties. The unique 1T′-MoSe₂ phase was first explored in microwave absorption and composited with GOx to afford advanced conductivity loss and dielectric loss. The introduction of additional interface (2H/1T or 2H/1T') and abundant unsaturated defects promote multiple polarization, the semiconductor-metal mixed phase brought in a certain magnetic loss, optimizes the electron transfer ability and adjusts the impedance matching. Consequently, 1T′-MoSe₂/GOx provides the minimum reflection loss (RL_min) of −52.08 dB and the effective absorption bandwidth (EAB, RL < -10 dB) of 5.3 GHz at 10 % filler content, which is approximately 9 times that of 2H–MoSe₂/GOx and nearly 5 times that of 1T-MoSe₂/GOx. This paper specifically explains the reasons for the phase modulation-induced magnetic losses and provides an effective phase modulation paradigm for developing advanced transition metal disulfide (such as MoS₂, WS₂ and WSe₂) microwave absorbers.